| 10840345 |
Source and drain contact cut last process to enable wrap-around-contact |
Andrew M. Greene, Dechao Guo, Tenko Yamashita, Veeraraghavan S. Basker, Ardasheir Rahman |
2020-11-17 |
| 10818759 |
Self aligned replacement metal source/drain finFET |
Emre Alptekin, Reinaldo Vega |
2020-10-27 |
| 10755949 |
Structures, methods and applications for electrical pulse anneal processes |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Tom C. Lee, Junjun Li, Souvick Mitra +1 more |
2020-08-25 |
| 10685866 |
Fin isolation to mitigate local layout effects |
Huimei Zhou, Gen Tsutsui, Andrew M. Greene, Dechao Guo, Huiming Bu +2 more |
2020-06-16 |
| 10644104 |
Vertical fin field effect transistor with air gap spacers |
Hari V. Mallela, Reinaldo Vega, Rajasekhar Venigalla |
2020-05-05 |
| 10586854 |
Gate-all-around field effect transistor having multiple threshold voltages |
Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Reinaldo Vega, Tenko Yamashita |
2020-03-10 |
| 10559670 |
Nanosheet field effect transistors with partial inside spacers |
Michael A. Guillorn, Terence B. Hook, Reinaldo Vega, Rajasekhar Venigalla |
2020-02-11 |
