RV

Rajasekhar Venigalla

IBM: 12 patents #349 of 11,274Top 4%
TE Tessera: 2 patents #18 of 99Top 20%
📍 Boise, ID: #14 of 609 inventorsTop 3%
🗺 Idaho: #19 of 1,182 inventorsTop 2%
Overall (2020): #4,307 of 565,922Top 1%
14
Patents 2020

Issued Patents 2020

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
10840247 Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction Chia-Yu Chen, Bruce B. Doris, Hong He 2020-11-17
10832971 Fabricating tapered semiconductor devices Ravikumar Ramachandran, Albert M. Chu, Alan C. Thomas, Kafai Lai 2020-11-10
10777557 Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction Chia-Yu Chen, Bruce B. Doris, Hong He 2020-09-15
10734385 Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction Chia-Yu Chen, Bruce B. Doris, Hong He 2020-08-04
10727316 Vertical transistor fabrication and devices Brent A. Anderson, Bruce B. Doris, Seong-Dong Kim 2020-07-28
10665589 Gate cut with integrated etch stop layer Marc A. Bergendahl, Andrew M. Greene 2020-05-26
10658391 Hybrid substrate engineering in CMOS finFET integration for mobility improvement Chia-Yu Chen, Bruce B. Doris, Hong He 2020-05-19
10644104 Vertical fin field effect transistor with air gap spacers Hari V. Mallela, Robert R. Robison, Reinaldo Vega 2020-05-05
10622459 Vertical transistor fabrication and devices Brent A. Anderson, Bruce B. Doris, Seong-Dong Kim 2020-04-14
10600884 Additive core subtractive liner for metal cut etch processes Ruqiang Bao, Kisup Chung, Andrew M. Greene, Sivananda K. Kanakasabapathy, David L. Rath +1 more 2020-03-24
10580773 Gate cut with integrated etch stop layer Marc A. Bergendahl, Andrew M. Greene 2020-03-03
10573646 Preserving channel strain in fin cuts Andrew M. Greene, Dechao Guo, Ravikumar Ramachandran 2020-02-25
10559670 Nanosheet field effect transistors with partial inside spacers Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega 2020-02-11
10529717 Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction Chia-Yu Chen, Bruce B. Doris, Hong He 2020-01-07