| 10833048 |
Nanowire enabled substrate bonding and electrical contact formation |
Li-Wen Hung, Hari V. Mallela |
2020-11-10 |
| 10818759 |
Self aligned replacement metal source/drain finFET |
Emre Alptekin, Robert R. Robison |
2020-10-27 |
| 10811413 |
Multi-threshold vertical FETs with common gates |
Takashi Ando, Choonghyun Lee, Hari V. Mallela, Li-Wen Hung |
2020-10-20 |
| 10770512 |
Stacked resistive random access memory with integrated access transistor and high density layout |
Takashi Ando, Hari V. Mallela, Li-Wen Hung |
2020-09-08 |
| 10685866 |
Fin isolation to mitigate local layout effects |
Huimei Zhou, Gen Tsutsui, Andrew M. Greene, Dechao Guo, Huiming Bu +2 more |
2020-06-16 |
| 10658224 |
Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects |
Huimei Zhou, Gen Tsutsui, Veeraraghavan S. Basker, Andrew M. Greene, Dechao Guo +1 more |
2020-05-19 |
| 10644104 |
Vertical fin field effect transistor with air gap spacers |
Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla |
2020-05-05 |
| 10636874 |
External resistance reduction with embedded bottom source/drain for vertical transport FET |
Choonghyun Lee, Jingyun Zhang, Miaomiao Wang |
2020-04-28 |
| 10586854 |
Gate-all-around field effect transistor having multiple threshold voltages |
Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Tenko Yamashita |
2020-03-10 |
| 10559670 |
Nanosheet field effect transistors with partial inside spacers |
Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Rajasekhar Venigalla |
2020-02-11 |
| 10559690 |
Embedded source/drain structure for tall FinFET and method of formation |
Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo |
2020-02-11 |
