| 10879365 |
Transistors with non-vertical gates |
Cheng-Ying Huang, Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz +3 more |
2020-12-29 |
| 10861939 |
Stiff quantum layers to slow and or stop defect propagation |
Matthew V. Metz, Gilbert Dewey, Cheng-Ying Huang, Sean T. Ma, Willy Rachmady |
2020-12-08 |
| 10854752 |
High mobility strained channels for fin-based NMOS transistors |
Stephen M. Cea, Roza Kotlyar, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more |
2020-12-01 |
| 10818793 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more |
2020-10-27 |
| 10734488 |
Aluminum indium phosphide subfin germanium channel transistors |
Matthew V. Metz, Willy Rachmady, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more |
2020-08-04 |
| 10692973 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2020-06-23 |
| 10644112 |
Systems, methods and devices for isolation for subfin leakage |
Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more |
2020-05-05 |
| 10573715 |
Backside isolation for integrated circuit |
Aaron D. Lilak, Rishabh Mehandru, Paul B. Fischer, Stephen M. Cea |
2020-02-25 |
| 10546858 |
Low damage self-aligned amphoteric FINFET tip doping |
Jack T. Kavalieros, Chandra S. Mohapatra, Anand S. Murthy, Willy Rachmady, Matthew V. Metz +2 more |
2020-01-28 |
| 10529808 |
Dopant diffusion barrier for source/drain to curb dopant atom diffusion |
Chandra S. Mohapatra, Glenn A. Glass, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more |
2020-01-07 |