| 10847656 |
Fabrication of non-planar IGZO devices for improved electrostatics |
Van H. Le, Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic +4 more |
2020-11-24 |
| 10784170 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more |
2020-09-22 |
| 10748993 |
Strain compensation in transistors |
Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2020-08-18 |
| 10734511 |
High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer |
Cheng-Ying Huang, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Gilbert Dewey +1 more |
2020-08-04 |
| 10734488 |
Aluminum indium phosphide subfin germanium channel transistors |
Matthew V. Metz, Willy Rachmady, Harold W. Kennel, Van H. Le, Jack T. Kavalieros +1 more |
2020-08-04 |
| 10727138 |
Integration of single crystalline transistors in back end of line (BEOL) |
Van H. Le, Marko Radosavljevic, Rafael Rios, Gilbert Dewey |
2020-07-28 |
| 10727339 |
Selectively regrown top contact for vertical semiconductor devices |
Gilbert Dewey, Van H. Le, Jack T. Kavalieros, Marko Radosavljevic, Ravi Pillarisetty +3 more |
2020-07-28 |
| 10693008 |
Cladding layer epitaxy via template engineering for heterogeneous integration on silicon |
Niloy Mukherjee, Marko Radosavljevic, Jack T. Kavalieros, Ravi Pillarisetty, Niti Goel +2 more |
2020-06-23 |
| 10692973 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2020-06-23 |
| 10665688 |
Low Schottky barrier contact structure for Ge NMOS |
Willy Rachmady, Matthew V. Metz, Van H. Le, Gilbert Dewey, Ashish Agrawal +1 more |
2020-05-26 |
| 10644112 |
Systems, methods and devices for isolation for subfin leakage |
Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal, Harold W. Kennel +5 more |
2020-05-05 |
| 10644111 |
Strained silicon layer with relaxed underlayer |
Van H. Le, Ashish Agrawal, Jack T. Kavalieros, Matthew V. Metz, Seung Hoon Sung +2 more |
2020-05-05 |
| 10580895 |
Wide band gap transistors on non-native semiconductor substrates |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung +2 more |
2020-03-03 |
| 10580882 |
Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL) |
Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Van H. Le +1 more |
2020-03-03 |
| 10573717 |
Selective epitaxially grown III-V materials based devices |
Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more |
2020-02-25 |
| 10541305 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2020-01-21 |