Issued Patents 2020
Showing 76–100 of 132 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10651308 | Self aligned top extension formation for vertical transistors | Oleg Gluschenkov, Sanjay C. Mehta, Shogo Mochizuki | 2020-05-12 |
| 10651295 | Forming a fin using double trench epitaxy | Veeraraghavan S. Basker, Pouya Hashemi, Shogo Mochizuki | 2020-05-12 |
| 10651123 | High density antifuse co-integrated with vertical FET | Pouya Hashemi, Miaomiao Wang, Takashi Ando | 2020-05-12 |
| 10651042 | Salicide bottom contacts | Praneet Adusumilli, Oscar van der Straten | 2020-05-12 |
| 10644007 | Decoupling capacitor on strain relaxation buffer layer | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2020-05-05 |
| 10644109 | Digital alloy vertical lamellae FinFET with current flow in alloy layer direction | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2020-05-05 |
| 10643907 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2020-05-05 |
| 10636804 | Stacked FinFET programmable inverter (EPROM) | Karthik Balakrishnan, Tak H. Ning, Bahman Hekmatshoartabari | 2020-04-28 |
| 10629730 | Body contact in Fin field effect transistor design | Tak H. Ning, Jeng-Bang Yau, Bahman Hekmatshoartabari | 2020-04-21 |
| 10622379 | Structure and method to form defect free high-mobility semiconductor fins on insulator | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2020-04-14 |
| 10622486 | Tilted nanowire transistor | Pouya Hashemi, Kangguo Cheng, Karthik Balakrishnan | 2020-04-14 |
| 10622406 | Dual metal nitride landing pad for MRAM devices | Oscar van der Straten, Michael Rizzolo | 2020-04-14 |
| 10615271 | III-V lateral bipolar junction transistor on local facetted buried oxide layer | Pouya Hashemi, Mahmoud Khojasteh, Tak H. Ning | 2020-04-07 |
| 10608109 | Vertical transistor with enhanced drive current | Kangguo Cheng, Xin Miao | 2020-03-31 |
| 10608179 | Resistive random access memory with metal fin electrode | Takashi Ando, Pouya Hashemi | 2020-03-31 |
| 10608084 | Nanosheet isolated source/drain epitaxy by surface treatment and incubation delay | — | 2020-03-31 |
| 10600860 | Precise/designable FinFET resistor structure | Praneet Adusumilli, Shanti Pancharatnam, Oscar van der Straten | 2020-03-24 |
| 10600892 | Integrated ferroelectric capacitor/ field effect transistor structure | Takashi Ando, Pouya Hashemi | 2020-03-24 |
| 10600883 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2020-03-24 |
| 10600878 | Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2020-03-24 |
| 10600870 | Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2020-03-24 |
| 10600694 | Gate metal patterning for tight pitch applications | Shogo Mochizuki, Joshua M. Rubin, Junli Wang | 2020-03-24 |
| 10593669 | Diode connected vertical transistor | Karthik Balakrishnan, Pouya Hashemi | 2020-03-17 |
| 10593673 | Nanosheet with single epitaxial stack forming off-set dual material channels for gate-all-around CMOS | Xin Miao, Jingyun Zhang, Choonghyun Lee | 2020-03-17 |
| 10593659 | Deep high capacity capacitor for bulk substrates | Praneet Adusumilli, Keith E. Fogel, Oscar van der Straten | 2020-03-17 |