Issued Patents 2019
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510848 | Sub-fin sidewall passivation in replacement channel FinFETS | Glenn A. Glass, Ying-Feng PANG, Anand S. Murthy, Karthik Jambunathan | 2019-12-17 |
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra +2 more | 2019-12-03 |
| 10483353 | Transistor including tensile-strained germanium channel | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady +2 more | 2019-11-19 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10460993 | Fin cut and fin trim isolation for advanced integrated circuit structure fabrication | Byron Ho, Curtis W. Ward, Michael L. Hattendorf, Christopher P. Auth | 2019-10-29 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady +2 more | 2019-10-29 |
| 10461177 | Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions | Szuya S. Liao, Michael L. Hattendorf | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Willy Rachmady +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +3 more | 2019-10-01 |
| 10424580 | Semiconductor devices having modulated nanowire counts | Annalisa Cappellani, Kelin J. Kuhn, Rafael Rios, Gopinath Bhimarasetti, Seiyon Kim | 2019-09-24 |
| 10418464 | Techniques for forming transistors on the same die with varied channel materials | Glenn A. Glass, Anand S. Murthy, Hei Kam, Karthik Jambunathan, Chandra S. Mohapatra | 2019-09-17 |
| 10418415 | Interconnect capping process for integration of MRAM devices and the resulting structures | Christopher J. Wiegand, Oleg Golonzka, MD Tofizur Rahman, Brian S. Doyle, Mark L. Doczy +3 more | 2019-09-17 |
| 10411068 | Electrical contacts for magnetoresistive random access memory devices | Christopher J. Wiegand, Oleg Golonzka, Kaan Oguz, Kevin P. O'Brien, Tofizur Rahman +2 more | 2019-09-10 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more | 2019-09-10 |
| 10403752 | Prevention of subchannel leakage current in a semiconductor device with a fin structure | Karthik Jambunathan, Glenn A. Glass, Chandra S. Mohapatra, Anand S. Murthy, Stephen M. Cea | 2019-09-03 |
| 10396079 | Non-planar semiconductor device having doped sub-fin region and method to fabricate same | Salman Latif, Chanaka D. Munasinghe | 2019-08-27 |
| 10388800 | Thin film transistor with gate stack on multiple sides | Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros | 2019-08-20 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Willy Rachmady +2 more | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Jack T. Kavalieros, Benjamin Chu-Kung +4 more | 2019-08-06 |
| 10340445 | PSTTM device with bottom electrode interface material | Kaan Oguz, Kevin P. O'Brien, Christopher J. Wiegand, MD Tofizur Rahman, Brian S. Doyle +3 more | 2019-07-02 |
| 10340374 | High mobility field effect transistors with a retrograded semiconductor source/drain | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more | 2019-07-02 |
| 10340185 | Gate aligned contact and method to fabricate same | Oleg Golonzka, Swaminathan Sivakumar, Charles H. Wallace | 2019-07-02 |
| 10326075 | PSTTM device with multi-layered filter stack | Kaan Oguz, Kevin P. O'Brien, Christopher J. Wiegand, MD Tofizur Rahman, Brian S. Doyle +3 more | 2019-06-18 |
| 10319812 | Self-aligned gate edge and local interconnect and method to fabricate same | Milton Clair Webb, Mark Bohr, Szuya S. Liao | 2019-06-11 |
| 10304927 | Selective germanium p-contact metalization through trench | Glenn A. Glass, Anand S. Murthy | 2019-05-28 |