| 10516021 |
Reduced leakage transistors with germanium-rich channel regions |
Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim, Jun Sung Kang |
2019-12-24 |
| 10510848 |
Sub-fin sidewall passivation in replacement channel FinFETS |
Ying-Feng PANG, Anand S. Murthy, Tahir Ghani, Karthik Jambunathan |
2019-12-17 |
| 10483353 |
Transistor including tensile-strained germanium channel |
Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more |
2019-11-19 |
| 10461193 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor |
Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Willy Rachmady, Jack T. Kavalieros +2 more |
2019-10-29 |
| 10418464 |
Techniques for forming transistors on the same die with varied channel materials |
Anand S. Murthy, Hei Kam, Tahir Ghani, Karthik Jambunathan, Chandra S. Mohapatra |
2019-09-17 |
| 10403626 |
Fin sculpting and cladding during replacement gate process for transistor channel applications |
Anand S. Murthy, Daniel B. Aubertine, Subhash M. Joshi |
2019-09-03 |
| 10403752 |
Prevention of subchannel leakage current in a semiconductor device with a fin structure |
Karthik Jambunathan, Chandra S. Mohapatra, Anand S. Murthy, Stephen M. Cea, Tahir Ghani |
2019-09-03 |
| 10396203 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Anand S. Murthy, Daniel B. Aubertine, Subhash M. Joshi |
2019-08-27 |
| 10396201 |
Methods of forming dislocation enhanced strain in NMOS structures |
Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra |
2019-08-27 |
| 10373977 |
Transistor fin formation via cladding on sacrificial core |
Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros, Benjamin Chu-Kung +4 more |
2019-08-06 |
| 10304927 |
Selective germanium p-contact metalization through trench |
Anand S. Murthy, Tahir Ghani |
2019-05-28 |
| 10297670 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Anand S. Murthy, Tahir Ghani |
2019-05-21 |
| 10290709 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces |
Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more |
2019-05-14 |
| 10243078 |
Carrier confinement for high mobility channel devices |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +3 more |
2019-03-26 |
| 10229997 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2019-03-12 |
| 10211208 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Tahir Ghani, Willy Rachmady +2 more |
2019-02-19 |