Issued Patents 2019
Showing 25 most recent of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Anand S. Murthy +2 more | 2019-12-03 |
| 10490727 | Gate arrangements in quantum dot devices | Nicole K. Thomas, James S. Clarke, Ravi Pillarisetty, Hubert C. George, Kanwaljit Singh +5 more | 2019-11-26 |
| 10483353 | Transistor including tensile-strained germanium channel | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Gilbert Dewey +2 more | 2019-11-19 |
| 10475912 | Gate arrangements in quantum dot devices | Nicole K. Thomas, Ravi Pillarisetty, Kanwaljit Singh, Hubert C. George, Jeanette M. Roberts +5 more | 2019-11-12 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Anand S. Murthy +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +3 more | 2019-10-01 |
| 10418487 | Non-planar gate all-around device and method of fabrication thereof | Ravi Pillarisetty, Van H. Le, Jack T. Kavalieros, Robert S. Chau, Jessica S. Kachian | 2019-09-17 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-09-10 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Matthew V. Metz +2 more | 2019-09-03 |
| 10388733 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Ravi Pillarisetty, Jack T. Kavalieros | 2019-08-20 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Anand S. Murthy +2 more | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more | 2019-08-06 |
| 10347767 | Transistor with a subfin layer | Matthew V. Metz, Van H. Le, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros +1 more | 2019-07-09 |
| 10340374 | High mobility field effect transistors with a retrograded semiconductor source/drain | Gilbert Dewey, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-07-02 |
| 10319646 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2019-06-11 |
| 10290709 | Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Gilbert Dewey +2 more | 2019-05-14 |
| 10283589 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2019-05-07 |
| 10263079 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Gilbert Dewey, Jack T. Kavalieros | 2019-04-16 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2019-04-02 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz +8 more | 2019-04-02 |
| 10249740 | Ge nano wire transistor with GaAs as the sacrificial layer | Matthew V. Metz, Van H. Le, Jack T. Kavalieros, Sanaz K. Gardner | 2019-04-02 |
| 10243078 | Carrier confinement for high mobility channel devices | Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Tahir Ghani, Anand S. Murthy +3 more | 2019-03-26 |
| 10236369 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2019-03-19 |