Issued Patents 2019
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Anand S. Murthy +2 more | 2019-12-03 |
| 10475706 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Van H. Le +3 more | 2019-11-12 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady +2 more | 2019-10-29 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +3 more | 2019-10-01 |
| 10411122 | Semiconductor device having group III-V material active region and graded gate dielectric | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty | 2019-09-10 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Willy Rachmady, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-09-10 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Willy Rachmady +2 more | 2019-09-03 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more | 2019-08-20 |
| 10367093 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2019-07-30 |
| 10347767 | Transistor with a subfin layer | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros +1 more | 2019-07-09 |
| 10340374 | High mobility field effect transistors with a retrograded semiconductor source/drain | Gilbert Dewey, Willy Rachmady, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-07-02 |
| 10319646 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2019-06-11 |
| 10290709 | Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady +2 more | 2019-05-14 |
| 10263074 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2019-04-16 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Niloy Mukherjee +7 more | 2019-04-02 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Willy Rachmady +8 more | 2019-04-02 |
| 10249740 | Ge nano wire transistor with GaAs as the sacrificial layer | Willy Rachmady, Van H. Le, Jack T. Kavalieros, Sanaz K. Gardner | 2019-04-02 |
| 10243078 | Carrier confinement for high mobility channel devices | Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +3 more | 2019-03-26 |
| 10229997 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more | 2019-03-12 |
| 10211208 | High-mobility semiconductor source/drain spacer | Gilbert Dewey, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more | 2019-02-19 |
| 10204989 | Method of fabricating semiconductor structures on dissimilar substrates | Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more | 2019-02-12 |
| 10186581 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2019-01-22 |
| 10181518 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2019-01-15 |