| 10497814 |
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same |
Harold W. Kennel, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Anand S. Murthy +2 more |
2019-12-03 |
| 10475706 |
Making a defect free fin based device in lateral epitaxy overgrowth region |
Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Van H. Le +3 more |
2019-11-12 |
| 10461193 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor |
Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady +2 more |
2019-10-29 |
| 10461082 |
Well-based integration of heteroepitaxial N-type transistors with P-type transistors |
Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +2 more |
2019-10-29 |
| 10446685 |
High-electron-mobility transistors with heterojunction dopant diffusion barrier |
Chandra S. Mohapatra, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more |
2019-10-15 |
| 10431690 |
High electron mobility transistors with localized sub-fin isolation |
Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +3 more |
2019-10-01 |
| 10411122 |
Semiconductor device having group III-V material active region and graded gate dielectric |
Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty |
2019-09-10 |
| 10411007 |
High mobility field effect transistors with a band-offset semiconductor source/drain spacer |
Gilbert Dewey, Willy Rachmady, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more |
2019-09-10 |
| 10403733 |
Dielectric metal oxide cap for channel containing germanium |
Gilbert Dewey, Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Willy Rachmady +2 more |
2019-09-03 |
| 10388764 |
High-electron-mobility transistors with counter-doped dopant diffusion barrier |
Chandra S. Mohapatra, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more |
2019-08-20 |
| 10367093 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2019-07-30 |
| 10347767 |
Transistor with a subfin layer |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros +1 more |
2019-07-09 |
| 10340374 |
High mobility field effect transistors with a retrograded semiconductor source/drain |
Gilbert Dewey, Willy Rachmady, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more |
2019-07-02 |
| 10319646 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more |
2019-06-11 |
| 10290709 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady +2 more |
2019-05-14 |
| 10263074 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2019-04-16 |
| 10249490 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Niloy Mukherjee +7 more |
2019-04-02 |
| 10249742 |
Offstate parasitic leakage reduction for tunneling field effect transistors |
Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Willy Rachmady +8 more |
2019-04-02 |
| 10249740 |
Ge nano wire transistor with GaAs as the sacrificial layer |
Willy Rachmady, Van H. Le, Jack T. Kavalieros, Sanaz K. Gardner |
2019-04-02 |
| 10243078 |
Carrier confinement for high mobility channel devices |
Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +3 more |
2019-03-26 |
| 10229997 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more |
2019-03-12 |
| 10211208 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more |
2019-02-19 |
| 10204989 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more |
2019-02-12 |
| 10186581 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2019-01-22 |
| 10181518 |
Selective epitaxially grown III-V materials based devices |
Niti Goel, Gilbert Dewey, Niloy Mukherjee, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2019-01-15 |