| 10497785 |
Gallium nitride voltage regulator |
Han Wui Then, Marko Radosavljevic |
2019-12-03 |
| 10475888 |
Integration of III-V devices on Si wafers |
Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2019-11-12 |
| 10475706 |
Making a defect free fin based device in lateral epitaxy overgrowth region |
Niti Goel, Benjamin Chu-Kung, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more |
2019-11-12 |
| 10453679 |
Methods and devices integrating III-N transistor circuitry with Si transistor circuitry |
Marko Radosavljevic, Han Wui Then, Ravi Pillarisetty, Kimin Jun, Patrick Morrow +3 more |
2019-10-22 |
| 10439057 |
Multi-gate high electron mobility transistors and methods of fabrication |
Kimin Jun, Alejandro X. Levander, Patrick Morrow |
2019-10-08 |
| 10431717 |
Light-emitting diode (LED) and micro LED substrates and methods for making the same |
Marko Radosavljevic, Han Wui Then |
2019-10-01 |
| 10411067 |
Integrated RF frontend structures |
Han Wui Then, Marko Radosavljevic |
2019-09-10 |
| 10388777 |
Heteroepitaxial structures with high temperature stable substrate interface material |
Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau |
2019-08-20 |
| 10347544 |
Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same |
Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung |
2019-07-09 |
| 10347834 |
Wafer-scale integration of vacancy centers for spin qubits |
Nicole K. Thomas, Marko Radosavljevic, Ravi Pillarisetty, Kanwaljit Singh, Hubert C. George +6 more |
2019-07-09 |
| 10332998 |
Transistors with heteroepitaxial III-N source/drain |
Han Wui Then, Marko Radosavljevic |
2019-06-25 |
| 10325774 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
Han Wui Then, Benjamin Chu-Kung, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more |
2019-06-18 |
| 10249490 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2019-04-02 |
| 10243069 |
Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas |
Han Wui Then, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau |
2019-03-26 |
| 10229991 |
III-N epitaxial device structures on free standing silicon mesas |
Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2019-03-12 |
| 10217673 |
Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith |
Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau +1 more |
2019-02-26 |
| 10211327 |
Semiconductor devices with raised doped crystalline structures |
Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Han Wui Then, Robert S. Chau |
2019-02-19 |
| 10204989 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Seung Hoon Sung, Sanaz K. Gardner +3 more |
2019-02-12 |
| 10170612 |
Epitaxial buffer layers for group III-N transistors on silicon substrates |
Han Wui Then, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau |
2019-01-01 |