| 10497785 |
Gallium nitride voltage regulator |
Sansaptak Dasgupta, Marko Radosavljevic |
2019-12-03 |
| 10475888 |
Integration of III-V devices on Si wafers |
Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2019-11-12 |
| 10453679 |
Methods and devices integrating III-N transistor circuitry with Si transistor circuitry |
Sansaptak Dasgupta, Marko Radosavljevic, Ravi Pillarisetty, Kimin Jun, Patrick Morrow +3 more |
2019-10-22 |
| 10431717 |
Light-emitting diode (LED) and micro LED substrates and methods for making the same |
Sansaptak Dasgupta, Marko Radosavljevic |
2019-10-01 |
| 10411067 |
Integrated RF frontend structures |
Sansaptak Dasgupta, Marko Radosavljevic |
2019-09-10 |
| 10388777 |
Heteroepitaxial structures with high temperature stable substrate interface material |
Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau |
2019-08-20 |
| 10347544 |
Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same |
Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung |
2019-07-09 |
| 10332998 |
Transistors with heteroepitaxial III-N source/drain |
Sansaptak Dasgupta, Marko Radosavljevic |
2019-06-25 |
| 10325774 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
Sansaptak Dasgupta, Benjamin Chu-Kung, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more |
2019-06-18 |
| 10290614 |
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits |
Robert S. Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic, Ravi Pillarisetty +2 more |
2019-05-14 |
| 10263074 |
High voltage field effect transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2019-04-16 |
| 10243069 |
Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas |
Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau |
2019-03-26 |
| 10229991 |
III-N epitaxial device structures on free standing silicon mesas |
Sansaptak Dasgupta, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2019-03-12 |
| 10217673 |
Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith |
Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau +1 more |
2019-02-26 |
| 10211327 |
Semiconductor devices with raised doped crystalline structures |
Marko Radosavljevic, Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau |
2019-02-19 |
| 10204989 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more |
2019-02-12 |
| 10186581 |
Group III-N nanowire transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2019-01-22 |
| 10170612 |
Epitaxial buffer layers for group III-N transistors on silicon substrates |
Sansaptak Dasgupta, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau |
2019-01-01 |