| 10497814 |
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same |
Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Anand S. Murthy +2 more |
2019-12-03 |
$19,496,000 |
| 10483353 |
Transistor including tensile-strained germanium channel |
Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady +2 more |
2019-11-19 |
$26,843,000 |
| 10461193 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor |
Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more |
2019-10-29 |
$25,165,000 |
| 10461082 |
Well-based integration of heteroepitaxial N-type transistors with P-type transistors |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +2 more |
2019-10-29 |
$25,165,000 |
| 10446685 |
High-electron-mobility transistors with heterojunction dopant diffusion barrier |
Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Willy Rachmady, Anand S. Murthy +2 more |
2019-10-15 |
$18,012,000 |
| 10431690 |
High electron mobility transistors with localized sub-fin isolation |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Jack T. Kavalieros, Anand S. Murthy +3 more |
2019-10-01 |
$22,201,000 |
| 10411007 |
High mobility field effect transistors with a band-offset semiconductor source/drain spacer |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more |
2019-09-10 |
$24,704,000 |
| 10411122 |
Semiconductor device having group III-V material active region and graded gate dielectric |
Marko Radosavljevic, Ravi Pillarisetty, Matthew V. Metz |
2019-09-10 |
$24,704,000 |
| 10403733 |
Dielectric metal oxide cap for channel containing germanium |
Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Matthew V. Metz, Willy Rachmady +2 more |
2019-09-03 |
$18,715,000 |
| 10388800 |
Thin film transistor with gate stack on multiple sides |
Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani |
2019-08-20 |
$17,708,000 |
| 10388764 |
High-electron-mobility transistors with counter-doped dopant diffusion barrier |
Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Anand S. Murthy +2 more |
2019-08-20 |
$17,708,000 |
| 10373977 |
Transistor fin formation via cladding on sacrificial core |
Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more |
2019-08-06 |
$15,127,000 |
| 10347767 |
Transistor with a subfin layer |
Willy Rachmady, Matthew V. Metz, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros +1 more |
2019-07-09 |
$19,303,000 |
| 10340374 |
High mobility field effect transistors with a retrograded semiconductor source/drain |
Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma, Jack T. Kavalieros +2 more |
2019-07-02 |
$19,690,000 |
| 10340275 |
Stackable thin film memory |
Elijah V. Karpov, Jack T. Kavalieros, Robert S. Chau, Niloy Mukherjee, Rafael Rios +5 more |
2019-07-02 |
$19,690,000 |
| 10319646 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more |
2019-06-11 |
$16,707,000 |
| 10290709 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady +2 more |
2019-05-14 |
$24,469,000 |
| 10290614 |
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits |
Han Wui Then, Robert S. Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic +2 more |
2019-05-14 |
$24,469,000 |
| 10263079 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Jack T. Kavalieros |
2019-04-16 |
$24,207,000 |
| 10263074 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2019-04-16 |
$24,207,000 |
| 10249490 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2019-04-02 |
$26,887,000 |
| 10249742 |
Offstate parasitic leakage reduction for tunneling field effect transistors |
Van H. Le, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz, Willy Rachmady +8 more |
2019-04-02 |
$26,887,000 |
| 10243078 |
Carrier confinement for high mobility channel devices |
Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani, Anand S. Murthy +3 more |
2019-03-26 |
$18,583,000 |
| 10236369 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2019-03-19 |
$29,538,000 |
| 10229997 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more |
2019-03-12 |
$21,255,000 |
