| 10516021 |
Reduced leakage transistors with germanium-rich channel regions |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim, Jun Sung Kang |
2019-12-24 |
| 10497814 |
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same |
Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Anand S. Murthy +2 more |
2019-12-03 |
| 10483353 |
Transistor including tensile-strained germanium channel |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more |
2019-11-19 |
| 10461193 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor |
Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more |
2019-10-29 |
| 10461082 |
Well-based integration of heteroepitaxial N-type transistors with P-type transistors |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +2 more |
2019-10-29 |
| 10446685 |
High-electron-mobility transistors with heterojunction dopant diffusion barrier |
Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more |
2019-10-15 |
| 10431690 |
High electron mobility transistors with localized sub-fin isolation |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +3 more |
2019-10-01 |
| 10418464 |
Techniques for forming transistors on the same die with varied channel materials |
Glenn A. Glass, Anand S. Murthy, Hei Kam, Tahir Ghani, Karthik Jambunathan |
2019-09-17 |
| 10411007 |
High mobility field effect transistors with a band-offset semiconductor source/drain spacer |
Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Sean T. Ma, Jack T. Kavalieros +2 more |
2019-09-10 |
| 10403752 |
Prevention of subchannel leakage current in a semiconductor device with a fin structure |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Stephen M. Cea, Tahir Ghani |
2019-09-03 |
| 10396201 |
Methods of forming dislocation enhanced strain in NMOS structures |
Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka |
2019-08-27 |
| 10388764 |
High-electron-mobility transistors with counter-doped dopant diffusion barrier |
Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more |
2019-08-20 |
| 10373977 |
Transistor fin formation via cladding on sacrificial core |
Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more |
2019-08-06 |
| 10340374 |
High mobility field effect transistors with a retrograded semiconductor source/drain |
Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Sean T. Ma, Jack T. Kavalieros +2 more |
2019-07-02 |
| 10290709 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces |
Glenn A. Glass, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more |
2019-05-14 |
| 10243078 |
Carrier confinement for high mobility channel devices |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +3 more |
2019-03-26 |
| 10229997 |
Indium-rich NMOS transistor channels |
Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2019-03-12 |
| 10211208 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Tahir Ghani, Willy Rachmady +2 more |
2019-02-19 |