| 10516021 |
Reduced leakage transistors with germanium-rich channel regions |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Jun Sung Kang |
2019-12-24 |
| 10483385 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Cory E. Weber, Patrick H. Keys, Michael Haverty, Sadasivan Shankar |
2019-11-19 |
| 10424580 |
Semiconductor devices having modulated nanowire counts |
Annalisa Cappellani, Kelin J. Kuhn, Rafael Rios, Gopinath Bhimarasetti, Tahir Ghani |
2019-09-24 |
| 10304946 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Stephen M. Cea +1 more |
2019-05-28 |
| 10283589 |
Integration methods to fabricate internal spacers for nanowire devices |
Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more |
2019-05-07 |
| 10249742 |
Offstate parasitic leakage reduction for tunneling field effect transistors |
Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz +8 more |
2019-04-02 |