| 10516021 |
Reduced leakage transistors with germanium-rich channel regions |
Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Seiyon Kim, Jun Sung Kang |
2019-12-24 |
$26,956,000 |
| 10510848 |
Sub-fin sidewall passivation in replacement channel FinFETS |
Glenn A. Glass, Ying-Feng PANG, Tahir Ghani, Karthik Jambunathan |
2019-12-17 |
$31,829,000 |
| 10497814 |
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same |
Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra +2 more |
2019-12-03 |
$19,496,000 |
| 10483353 |
Transistor including tensile-strained germanium channel |
Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more |
2019-11-19 |
$26,843,000 |
| 10461082 |
Well-based integration of heteroepitaxial N-type transistors with P-type transistors |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more |
2019-10-29 |
$25,165,000 |
| 10461193 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor |
Chandra S. Mohapatra, Gilbert Dewey, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more |
2019-10-29 |
$25,165,000 |
| 10446685 |
High-electron-mobility transistors with heterojunction dopant diffusion barrier |
Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Willy Rachmady +2 more |
2019-10-15 |
$18,012,000 |
| 10431690 |
High electron mobility transistors with localized sub-fin isolation |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +3 more |
2019-10-01 |
$22,201,000 |
| 10418464 |
Techniques for forming transistors on the same die with varied channel materials |
Glenn A. Glass, Hei Kam, Tahir Ghani, Karthik Jambunathan, Chandra S. Mohapatra |
2019-09-17 |
$19,673,000 |
| 10411007 |
High mobility field effect transistors with a band-offset semiconductor source/drain spacer |
Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more |
2019-09-10 |
$24,704,000 |
| 10403626 |
Fin sculpting and cladding during replacement gate process for transistor channel applications |
Glenn A. Glass, Daniel B. Aubertine, Subhash M. Joshi |
2019-09-03 |
$18,715,000 |
| 10403752 |
Prevention of subchannel leakage current in a semiconductor device with a fin structure |
Karthik Jambunathan, Glenn A. Glass, Chandra S. Mohapatra, Stephen M. Cea, Tahir Ghani |
2019-09-03 |
$18,715,000 |
| 10396203 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Glenn A. Glass, Daniel B. Aubertine, Subhash M. Joshi |
2019-08-27 |
$17,353,000 |
| 10396201 |
Methods of forming dislocation enhanced strain in NMOS structures |
Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra |
2019-08-27 |
$17,353,000 |
| 10388764 |
High-electron-mobility transistors with counter-doped dopant diffusion barrier |
Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Willy Rachmady +2 more |
2019-08-20 |
$17,708,000 |
| 10373977 |
Transistor fin formation via cladding on sacrificial core |
Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros, Benjamin Chu-Kung +4 more |
2019-08-06 |
$15,127,000 |
| 10340374 |
High mobility field effect transistors with a retrograded semiconductor source/drain |
Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more |
2019-07-02 |
$19,690,000 |
| 10304927 |
Selective germanium p-contact metalization through trench |
Glenn A. Glass, Tahir Ghani |
2019-05-28 |
$17,387,000 |
| 10297670 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Glenn A. Glass, Tahir Ghani |
2019-05-21 |
$20,944,000 |
| 10290709 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces |
Glenn A. Glass, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more |
2019-05-14 |
$24,469,000 |
| 10283589 |
Integration methods to fabricate internal spacers for nanowire devices |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more |
2019-05-07 |
$24,403,000 |
| 10243078 |
Carrier confinement for high mobility channel devices |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Tahir Ghani +3 more |
2019-03-26 |
$18,583,000 |
| 10229997 |
Indium-rich NMOS transistor channels |
Chandra S. Mohapatra, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2019-03-12 |
$21,255,000 |
| 10211208 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Matthew V. Metz, Tahir Ghani, Willy Rachmady, Chandra S. Mohapatra +2 more |
2019-02-19 |
$27,334,000 |
