Issued Patents 2019
Showing 101–125 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10230005 | Four terminal stacked complementary junction field effect transistors | Karthik Balakrishnan, Bahman Hekmatshoartabari, Tak H. Ning | 2019-03-12 |
| 10229996 | Strained stacked nanowire field-effect transistors (FETs) | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2019-03-12 |
| 10229986 | Vertical transport field-effect transistor including dual layer top spacer | Hemanth Jagannathan, Choonghyun Lee, Christopher J. Waskiewicz | 2019-03-12 |
| 10229917 | Thin SRAM cell having vertical transistors | Karthik Balakrishnan, Michael A. Guillorn, Pouya Hashemi | 2019-03-12 |
| 10224281 | Metallic blocking layer for reliable interconnects and contacts | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2019-03-05 |
| 10224403 | Thin-base high frequency lateral bipolar junction transistor | Karthik Balakrishnan, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2019-03-05 |
| 10217818 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2019-02-26 |
| 10211320 | Fin cut without residual fin defects | Kangguo Cheng, Pouya Hashemi, Dominic J. Schepis | 2019-02-19 |
| 10211095 | High performance middle of line interconnects | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2019-02-19 |
| 10211341 | Tensile strained high percentage silicon germanium alloy FinFETS | Bruce B. Doris, Pouya Hashemi, Joshua M. Rubin, Robin M. Schulz | 2019-02-19 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2019-02-12 |
| 10199220 | Semiconductor structure having insulator pillars and semiconductor material on substrate | Dominic J. Schepis, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2019-02-05 |
| 10192888 | Metallized junction FinFET structures | Bruce B. Doris, Pranita Kerber, Joshua M. Rubin | 2019-01-29 |
| 10175192 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2019-01-08 |
| 10177169 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Pouya Hashemi, Ali Khakifirooz, Shogo Mochizuki | 2019-01-08 |
| 10177235 | Nano-sheet transistors with different threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2019-01-08 |
| 10177168 | Fin field-effect transistor having an oxide layer under one or more of the plurality of fins | Kangguo Cheng, Pouya Hashemi, Dominic J. Schepis | 2019-01-08 |
| 10176990 | SiGe FinFET with improved junction doping control | Pranita Kerber, Qiqing C. Ouyang | 2019-01-08 |
| 10170464 | Compound semiconductor devices having buried resistors formed in buffer layer | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2019-01-01 |
| 10170308 | Fabricating semiconductor devices by cross-linking and removing portions of deposited HSQ | Guy M. Cohen, Pouya Hashemi, Sanghoon Lee | 2019-01-01 |
| 10170423 | Metal cap integration by local alloying | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2019-01-01 |
| 10170302 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2019-01-01 |
| 10170419 | Biconvex low resistance metal wire | Praneet Adusumilli, Oscar van der Straten | 2019-01-01 |
| 10170360 | Reflow enhancement layer for metallization structures | Praneet Adusumilli, Oscar van der Straten | 2019-01-01 |
| 10170660 | Digital alloy germanium heterojunction solar cell | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2019-01-01 |