Issued Patents 2019
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10374042 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Pranita Kerber, Alexander Reznicek | 2019-08-06 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Alexander Reznicek, Dominic J. Schepis | 2019-02-12 |
| 10176990 | SiGe FinFET with improved junction doping control | Pranita Kerber, Alexander Reznicek | 2019-01-08 |