Issued Patents 2019
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10374042 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2019-08-06 |
| 10262999 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2019-04-16 |
| 10256319 | Non-uniform gate dielectric for U-shape MOSFET | Effendi Leobandung, Philip J. Oldiges | 2019-04-09 |
| 10217745 | High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Martin M. Frank, Vijay Narayanan | 2019-02-26 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2019-02-12 |
| 10192888 | Metallized junction FinFET structures | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2019-01-29 |
| 10176990 | SiGe FinFET with improved junction doping control | Qiqing C. Ouyang, Alexander Reznicek | 2019-01-08 |