MF

Martin M. Frank

IBM: 11 patents #396 of 11,143Top 4%
📍 Dobbs Ferry, NY: #1 of 38 inventorsTop 3%
🗺 New York: #261 of 13,137 inventorsTop 2%
Overall (2019): #7,075 of 560,194Top 2%
11
Patents 2019

Issued Patents 2019

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
10504799 Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap Takashi Ando, Renee T. Mo, Vijay Narayanan 2019-12-10
10468432 BEOL cross-bar array ferroelectric synapse units for domain wall movement Jin-Ping Han, Ramachandran Muralidhar, Paul M. Solomon, Dennis M. Newns 2019-11-05
10396077 Patterned gate dielectrics for III-V-based CMOS circuits Takashi Ando, Renee T. Mo, Vijay Narayanan, John Rozen 2019-08-27
10381431 Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end Takashi Ando, Xiao Sun, Jin-Ping Han, Vijay Narayanan 2019-08-13
10373835 Method of lateral oxidation of nFET and pFET high-K gate stacks Takashi Ando, Robert H. Dennard 2019-08-06
10319818 Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end Takashi Ando, Xiao Sun, Jin-Ping Han, Vijay Narayanan 2019-06-11
10262999 High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material Takashi Ando, Pranita Kerber, Vijay Narayanan 2019-04-16
10243143 Heterogeneous nanostructures for hierarchal assembly Shu-Jen Han, George S. Tulevski 2019-03-26
10217745 High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material Takashi Ando, Pranita Kerber, Vijay Narayanan 2019-02-26
10205097 Dielectric treatments for carbon nanotube devices Damon B. Farmer, Shu-Jen Han 2019-02-12
10170550 Stressed nanowire stack for field effect transistor Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek 2019-01-01