| 10468432 |
BEOL cross-bar array ferroelectric synapse units for domain wall movement |
Ramachandran Muralidhar, Paul M. Solomon, Dennis M. Newns, Martin M. Frank |
2019-11-05 |
| 10395713 |
One-transistor synapse cell with weight adjustment |
Xiao Sun, Teng-Chieh Yang |
2019-08-27 |
| 10381061 |
One-transistor synapse cell with weight adjustment |
Xiao Sun, Teng-Chieh Yang |
2019-08-13 |
| 10381431 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end |
Martin M. Frank, Takashi Ando, Xiao Sun, Vijay Narayanan |
2019-08-13 |
| 10332874 |
Indirect readout FET |
Yulong Li, Dennis M. Newns, Paul M. Solomon, Xiao Sun |
2019-06-25 |
| 10319818 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end |
Martin M. Frank, Takashi Ando, Xiao Sun, Vijay Narayanan |
2019-06-11 |
| 10229984 |
Gap fill of metal stack in replacement gate process |
Victor Chan, Shangbin Ko |
2019-03-12 |