| 9530659 |
Structure for preventing buried oxide gouging during planar and FinFET Processing on SOI |
Junli Wang |
2016-12-27 |
| 9508589 |
Conductive layer routing |
Stanley Seungchul Song, Zhongze Wang, Jeffrey Junhao Xu, Xiangdong Chen, Choh Fei Yeap |
2016-11-29 |
| 9478541 |
Half node scaling for vertical structures |
Stanley Seungchul Song, Jeffrey Junhao Xu, Matthew Michael Nowak, Choh Fei Yeap, Roawen Chen |
2016-10-25 |
| 9478490 |
Capacitor from second level middle-of-line layer in combination with decoupling capacitors |
John Jianhong Zhu, Stanley Seungchul Song, Zhongze Wang, Jeffrey Junhao Xu |
2016-10-25 |
| 9472453 |
Systems and methods of forming a reduced capacitance device |
Jeffrey Junhao Xu, John Jianhong Zhu, Stanley Seungchul Song, Choh Fei Yeap |
2016-10-18 |
| 9455026 |
Shared global read and write word lines |
Niladri Narayan Mojumder, Stanley Seungchul Song, Zhongze Wang, Ping-Lin Liu, Choh Fei Yeap |
2016-09-27 |
| 9431306 |
Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process |
Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz |
2016-08-30 |
| 9379058 |
Grounding dummy gate in scaled layout design |
Stanley Seungchul Song, Zhongze Wang, Ohsang Kwon, John Jianhong Zhu, Xiangdong Chen +3 more |
2016-06-28 |
| 9362400 |
Semiconductor device including dielectrically isolated finFETs and buried stressor |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek |
2016-06-07 |
| 9349658 |
Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material |
Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz |
2016-05-24 |
| 9318489 |
Complex circuits utilizing fin structures |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz |
2016-04-19 |
| 9299618 |
Structure and method for advanced bulk fin isolation |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek |
2016-03-29 |
| 9293583 |
Finfet with oxidation-induced stress |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz |
2016-03-22 |
| 9276113 |
Structure and method to make strained FinFET with improved junction capacitance and low leakage |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek |
2016-03-01 |
| 9257556 |
Silicon germanium FinFET formation by Ge condensation |
Jeffrey Junhao Xu, Vladimir Machkaoutsan, Stanley Seungchul Song, Choh Fei Yeap |
2016-02-09 |
| 9245981 |
Dielectric filler fins for planar topography in gate level |
Kangguo Cheng, Ramachandra Divakaruni, Bruce B. Doris, Ali Khakifirooz, Edward J. Nowak |
2016-01-26 |
