| 9524972 |
Metal layers for a three-port bit cell |
Ritu Chaba, Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-12-20 |
| 9455026 |
Shared global read and write word lines |
Stanley Seungchul Song, Zhongze Wang, Ping-Lin Liu, Kern Rim, Choh Fei Yeap |
2016-09-27 |
| 9449709 |
Volatile memory and one-time program (OTP) compatible memory cell and programming method |
Xia Li, Xiaonan Chen, Zhongze Wang, Weidan Li |
2016-09-20 |
| 9424909 |
Static random access memory (SRAM) arrays having substantially constant operational yields across multiple modes of operation |
Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-08-23 |
| 9379014 |
Static random-access memory (SRAM) array |
Stanley Seungchul Song, Choh Fei Yeap, Mosaddiq Saifuddin |
2016-06-28 |
| 9349686 |
Reduced height M1 metal lines for local on-chip routing |
Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang, Mustafa Badaroglu |
2016-05-24 |
| 9336864 |
Silicon germanium read port for a static random access memory register file |
Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-05-10 |
| 9318564 |
High density static random access memory array having advanced metal patterning |
Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-04-19 |
| 9257407 |
Heterogeneous channel material integration into wafer |
Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang |
2016-02-09 |