| 9508439 |
Non-volatile multiple time programmable memory device |
Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Seung H. Kang, Xiaonan Chen +2 more |
2016-11-29 |
$8,708,000 |
| 9502424 |
Integrated circuit device featuring an antifuse and method of making same |
Zhongze Wang, John Jianhong Zhu |
2016-11-22 |
$8,308,000 |
| 9496314 |
Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area |
Yu Lu, Xiaochun Zhu, Seung H. Kang |
2016-11-15 |
$8,218,000 |
| 9496048 |
Differential one-time-programmable (OTP) memory array |
Xiaonan Chen, Zhongze Wang |
2016-11-15 |
$8,218,000 |
| 9461055 |
Advanced metal-nitride-oxide-silicon multiple-time programmable memory |
Zhongze Wang, Daniel Wayne Perry |
2016-10-04 |
$10,096,000 |
| 9461094 |
Switching film structure for magnetic random access memory (MRAM) cell |
Wei-Chuan Chen, Yu Lu, Kangho Lee, Seung H. Kang |
2016-10-04 |
$10,096,000 |
| 9449709 |
Volatile memory and one-time program (OTP) compatible memory cell and programming method |
Xiaonan Chen, Niladri Narayan Mojumder, Zhongze Wang, Weidan Li |
2016-09-20 |
$8,214,000 |
| 9437272 |
Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays |
Yu Lu |
2016-09-06 |
$12,432,000 |
| 9431097 |
Volatile/non-volatile SRAM device |
Xiaonan Chen, Zhongze Wang |
2016-08-30 |
$10,588,000 |
| 9425296 |
Vertical tunnel field effect transistor |
Ming Cai, Bin Yang |
2016-08-23 |
$9,927,000 |
| 9413349 |
High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods |
Xiao Lu, Xiaonan Chen, Zhongze Wang, Choh Fei Yeap |
2016-08-09 |
$11,703,000 |
| 9412818 |
System and method of manufacturing a fin field-effect transistor having multiple fin heights |
Bin Yang, PR Chidambaram, Choh Fei Yeap |
2016-08-09 |
$11,703,000 |
| 9406689 |
Logic finFET high-K/conductive gate embedded multiple time programmable flash memory |
Bin Yang, Seung H. Kang |
2016-08-02 |
$10,911,000 |
| 9406875 |
MRAM integration techniques for technology scaling |
Yu Lu, Seung H. Kang |
2016-08-02 |
$10,911,000 |
| 9385308 |
Perpendicular magnetic tunnel junction structure |
— |
2016-07-05 |
$7,179,000 |
| 9385305 |
STT-MRAM design enhanced by switching current induced magnetic field |
William Xia, Wenqing Wu, Kendrick Hoy Leong Yuen, Abhishek Banerjee, Seung H. Kang +1 more |
2016-07-05 |
$7,179,000 |
| 9373782 |
MTJ structure and integration scheme |
Seung H. Kang, Matthew Michael Nowak |
2016-06-21 |
$10,788,000 |
| 9373412 |
System and method of programming a memory cell |
Bin Yang |
2016-06-21 |
$10,788,000 |
| 9372123 |
Flexible temperature sensor including conformable electronics |
Sanjay Gupta, Kevin Dowling, Isaiah Kacyvenski, Melissa Ceruolo, Barry G. Ives |
2016-06-21 |
|
| 9368718 |
Method of forming a magnetic tunnel junction device |
— |
2016-06-14 |
$7,654,000 |
| 9349656 |
Method of forming a complementary metal-oxide-semiconductor (CMOS) device |
Bin Yang, Jun Yuan |
2016-05-24 |
$8,262,000 |
| 9324768 |
System and method of shared bit line MRAM |
Xiaochun Zhu, Seung H. Kang |
2016-04-26 |
$8,850,000 |
| 9318696 |
Self-aligned top contact for MRAM fabrication |
Yu Lu, Seung H. Kang, Shiqun Gu |
2016-04-19 |
$8,352,000 |
| 9294965 |
Handover control system, user terminal, signaling relay apparatus, and session control apparatus |
Hong Cheng, Tien Ming Benjamin Koh, Takako Hori |
2016-03-22 |
|
| 9263522 |
Transistor with a diffusion barrier |
Bin Yang, PR Chidambaram |
2016-02-16 |
$6,980,000 |
