| 9461094 |
Switching film structure for magnetic random access memory (MRAM) cell |
Xia Li, Wei-Chuan Chen, Yu Lu, Seung H. Kang |
2016-10-04 |
| 9455014 |
Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems |
Taehyun Kim, Sungryul Kim, Seung H. Kang, Jung Pill Kim |
2016-09-27 |
| 9444035 |
Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication |
Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang |
2016-09-13 |
| 9385309 |
Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials |
Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Seung H. Kang |
2016-07-05 |
| 9379314 |
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) |
Chando Park, Seung H. Kang |
2016-06-28 |
| 9368232 |
Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control |
Wah Nam Hsu, Xiao Lu, Seung H. Kang |
2016-06-14 |
| 9368715 |
Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) |
Seung H. Kang, Xiaochun Zhu |
2016-06-14 |
| 9343135 |
Physically unclonable function based on programming voltage of magnetoresistive random-access memory |
Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more |
2016-05-17 |
| 9324939 |
Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) |
Chando Park, Matthias Georg Gottwald, Seung H. Kang |
2016-04-26 |
| 9298946 |
Physically unclonable function based on breakdown voltage of metal-insulator-metal device |
Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more |
2016-03-29 |
| 9245608 |
Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device |
Wei-Chuan Chen, Xiaochun Zhu, Seung H. Kang |
2016-01-26 |
| 9245610 |
OTP cell with reversed MTJ connection |
Jung Pill Kim, Taehyun Kim, Seung H. Kang, Xia Li, Wah Nam Hsu |
2016-01-26 |
| 9230630 |
Physically unclonable function based on the initial logical state of magnetoresistive random-access memory |
Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more |
2016-01-05 |