Issued Patents 2016
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9524765 | Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion | Seung H. Kang | 2016-12-20 |
| 9508439 | Non-volatile multiple time programmable memory device | Xia Li, Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Seung H. Kang +2 more | 2016-11-29 |
| 9502469 | Electrically reconfigurable interposer with built-in resistive memory | Vidhya Ramachandran, Seung H. Kang | 2016-11-22 |
| 9496314 | Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area | Xiaochun Zhu, Xia Li, Seung H. Kang | 2016-11-15 |
| 9490424 | Sub-lithographic patterning of magnetic tunneling junction devices | — | 2016-11-08 |
| 9461094 | Switching film structure for magnetic random access memory (MRAM) cell | Xia Li, Wei-Chuan Chen, Kangho Lee, Seung H. Kang | 2016-10-04 |
| 9437272 | Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays | Xia Li | 2016-09-06 |
| 9406875 | MRAM integration techniques for technology scaling | Xia Li, Seung H. Kang | 2016-08-02 |
| 9362336 | Sub-lithographic patterning of magnetic tunneling junction devices | — | 2016-06-07 |
| 9349939 | Etch-resistant protective coating for a magnetic tunnel junction device | Chando Park, Wei-Chuan Chen | 2016-05-24 |
| 9343659 | Embedded magnetoresistive random access memory (MRAM) integration with top contacts | Wei-Chuan Chen, Seung H. Kang | 2016-05-17 |
| 9318696 | Self-aligned top contact for MRAM fabrication | Xia Li, Seung H. Kang, Shiqun Gu | 2016-04-19 |
| 9269893 | Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch | Chando Park, Wei-Chuan Chen | 2016-02-23 |