CP

Chando Park

QU Qualcomm: 6 patents #319 of 3,136Top 15%
HB Hgst Netherlands, B.V.: 1 patents #109 of 340Top 35%
Overall (2016): #15,190 of 481,213Top 4%
7
Patents 2016

Issued Patents 2016

Patent #TitleCo-InventorsDate
9444035 Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication Kangho Lee, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang 2016-09-13
9385309 Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials Matthias Georg Gottwald, Jimmy Jianan Kan, Kangho Lee, Seung H. Kang 2016-07-05
9379314 Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) Kangho Lee, Seung H. Kang 2016-06-28
9349939 Etch-resistant protective coating for a magnetic tunnel junction device Yu Lu, Wei-Chuan Chen 2016-05-24
9324939 Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) Matthias Georg Gottwald, Kangho Lee, Seung H. Kang 2016-04-26
9318133 Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field James Mac Freitag, Zheng Gao 2016-04-19
9269893 Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch Yu Lu, Wei-Chuan Chen 2016-02-23