| 9508589 |
Conductive layer routing |
Stanley Seungchul Song, Kern Rim, Zhongze Wang, Xiangdong Chen, Choh Fei Yeap |
2016-11-29 |
| 9508439 |
Non-volatile multiple time programmable memory device |
Xia Li, Xiao Lu, Matthew Michael Nowak, Seung H. Kang, Xiaonan Chen +2 more |
2016-11-29 |
| 9502414 |
Adjacent device isolation |
Vladimir Machkaoutsan, Mustafa Badaroglu, Stanley Seungchul Song, Choh Fei Yeap |
2016-11-22 |
| 9502283 |
Electron-beam (E-beam) based semiconductor device features |
Stanley Seungchul Song, Da Yang, Choh Fei Yeap |
2016-11-22 |
| 9496181 |
Sub-fin device isolation |
Stanley Seungchul Song, Vladimir Machkaoutsan, Mustafa Badaroglu, Choh Fei Yeap |
2016-11-15 |
| 9478490 |
Capacitor from second level middle-of-line layer in combination with decoupling capacitors |
John Jianhong Zhu, Stanley Seungchul Song, Kern Rim, Zhongze Wang |
2016-10-25 |
| 9478541 |
Half node scaling for vertical structures |
Stanley Seungchul Song, Kern Rim, Matthew Michael Nowak, Choh Fei Yeap, Roawen Chen |
2016-10-25 |
| 9478637 |
Scaling EOT by eliminating interfacial layers from high-K/metal gates of MOS devices |
— |
2016-10-25 |
| 9472453 |
Systems and methods of forming a reduced capacitance device |
John Jianhong Zhu, Stanley Seungchul Song, Kern Rim, Choh Fei Yeap |
2016-10-18 |
| 9425096 |
Air gap between tungsten metal lines for interconnects with reduced RC delay |
Shiqun Gu, Matthew Michael Nowak |
2016-08-23 |
| 9343357 |
Selective conductive barrier layer formation |
John Jianhong Zhu, Choh Fei Yeap |
2016-05-17 |
| 9306066 |
Method and apparatus of stressed FIN NMOS FinFET |
Choh Fei Yeap |
2016-04-05 |
| 9299840 |
FinFETs and methods for forming the same |
— |
2016-03-29 |
| 9257556 |
Silicon germanium FinFET formation by Ge condensation |
Vladimir Machkaoutsan, Kern Rim, Stanley Seungchul Song, Choh Fei Yeap |
2016-02-09 |
| 9240480 |
Metal-oxide-semiconductor field-effect transistor with metal-insulator semiconductor contact structure to reduce Schottky barrier |
— |
2016-01-19 |
