Issued Patents 2016
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9524972 | Metal layers for a three-port bit cell | Niladri Narayan Mojumder, Ritu Chaba, Ping-Lin Liu, Zhongze Wang, Choh Fei Yeap | 2016-12-20 |
| 9508589 | Conductive layer routing | Kern Rim, Zhongze Wang, Jeffrey Junhao Xu, Xiangdong Chen, Choh Fei Yeap | 2016-11-29 |
| 9502414 | Adjacent device isolation | Vladimir Machkaoutsan, Mustafa Badaroglu, Jeffrey Junhao Xu, Choh Fei Yeap | 2016-11-22 |
| 9502283 | Electron-beam (E-beam) based semiconductor device features | Jeffrey Junhao Xu, Da Yang, Choh Fei Yeap | 2016-11-22 |
| 9496181 | Sub-fin device isolation | Jeffrey Junhao Xu, Vladimir Machkaoutsan, Mustafa Badaroglu, Choh Fei Yeap | 2016-11-15 |
| 9478541 | Half node scaling for vertical structures | Kern Rim, Jeffrey Junhao Xu, Matthew Michael Nowak, Choh Fei Yeap, Roawen Chen | 2016-10-25 |
| 9478490 | Capacitor from second level middle-of-line layer in combination with decoupling capacitors | John Jianhong Zhu, Kern Rim, Zhongze Wang, Jeffrey Junhao Xu | 2016-10-25 |
| 9472453 | Systems and methods of forming a reduced capacitance device | Jeffrey Junhao Xu, John Jianhong Zhu, Kern Rim, Choh Fei Yeap | 2016-10-18 |
| 9460777 | SRAM read buffer with reduced sensing delay and improved sensing margin | Seong-Ook Jung, Younghwi Yang, Zhongze Wang, Choh Fei Yeap | 2016-10-04 |
| 9455026 | Shared global read and write word lines | Niladri Narayan Mojumder, Zhongze Wang, Ping-Lin Liu, Kern Rim, Choh Fei Yeap | 2016-09-27 |
| 9424909 | Static random access memory (SRAM) arrays having substantially constant operational yields across multiple modes of operation | Niladri Narayan Mojumder, Ping-Lin Liu, Zhongze Wang, Choh Fei Yeap | 2016-08-23 |
| 9396931 | Method of forming fins from different materials on a substrate | Zhongze Wang, Choh Fei Yeap | 2016-07-19 |
| 9378803 | System and method to regulate operating voltage of a memory array | Zhongze Wang | 2016-06-28 |
| 9379058 | Grounding dummy gate in scaled layout design | Zhongze Wang, Ohsang Kwon, Kern Rim, John Jianhong Zhu, Xiangdong Chen +3 more | 2016-06-28 |
| 9379014 | Static random-access memory (SRAM) array | Niladri Narayan Mojumder, Choh Fei Yeap, Mosaddiq Saifuddin | 2016-06-28 |
| 9349686 | Reduced height M1 metal lines for local on-chip routing | Choh Fei Yeap, Zhongze Wang, Niladri Narayan Mojumder, Mustafa Badaroglu | 2016-05-24 |
| 9336864 | Silicon germanium read port for a static random access memory register file | Niladri Narayan Mojumder, Zhongze Wang, Choh Fei Yeap | 2016-05-10 |
| 9336863 | Dual write wordline memory cell | Seong-Ook Jung, Younghwi Yang, Choh Fei Yeap, Zhongze Wang | 2016-05-10 |
| 9318564 | High density static random access memory array having advanced metal patterning | Niladri Narayan Mojumder, Zhongze Wang, Choh Fei Yeap | 2016-04-19 |
| 9257407 | Heterogeneous channel material integration into wafer | Choh Fei Yeap, Zhongze Wang, Niladri Narayan Mojumder | 2016-02-09 |
| 9257556 | Silicon germanium FinFET formation by Ge condensation | Jeffrey Junhao Xu, Vladimir Machkaoutsan, Kern Rim, Choh Fei Yeap | 2016-02-09 |
| 9252228 | Threshold voltage adjustment in metal oxide semiconductor field effect transistor with silicon oxynitride polysilicon gate stack on fully depleted silicon-on-insulator | Choh Fei Yeap | 2016-02-02 |
| 9245975 | Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length | Kwan-Yong Lim, Amitabh Jain | 2016-01-26 |
| 9240404 | Embedded polysilicon resistor in integrated circuits formed by a replacement gate process | Kwan-Yong Lim, Ki-Don Lee | 2016-01-19 |