| 9502091 |
Sensing circuit for resistive memory cells |
Taehui Na, Byung Kyu Song, Jung Pill Kim, Seung H. Kang |
2016-11-22 |
| 9502088 |
Constant sensing current for reading resistive memory |
Sara Choi, Jisu Kim, Taehui Na, Jung Pill Kim, Seung H. Kang |
2016-11-22 |
| 9496027 |
Static random access memory device including write assist circuit and writing method thereof |
Woojin Rim, Taejoong Song, Gyuhong Kim, Hanwool Jeong |
2016-11-15 |
| 9460777 |
SRAM read buffer with reduced sensing delay and improved sensing margin |
Younghwi Yang, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-10-04 |
| 9413236 |
Voltage converter |
Jin-Hyuk Kim, Dong-Hoon Jung, Kyung-Ho Ryu, Byoung-Chan Oh |
2016-08-09 |
| 9406354 |
System, apparatus, and method for an offset cancelling single ended sensing circuit |
Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-08-02 |
| 9390779 |
System and method of sensing a memory cell |
Taehui Na, Jisu Kim, Seung H. Kang, Jung Pill Kim |
2016-07-12 |
| 9378781 |
System, apparatus, and method for sense amplifiers |
Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-06-28 |
| 9336863 |
Dual write wordline memory cell |
Younghwi Yang, Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang |
2016-05-10 |
| 9281039 |
System and method to provide a reference cell using magnetic tunnel junction cells |
Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang |
2016-03-08 |
