Issued Patents 2016
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9507675 | Systems and methods for recovering from uncorrected DRAM bit errors | Dexter Tamio Chun, Yanru Li, Deepti Vijayalakshmi Sriramagiri | 2016-11-29 |
| 9502091 | Sensing circuit for resistive memory cells | Seong-Ook Jung, Taehui Na, Byung Kyu Song, Seung H. Kang | 2016-11-22 |
| 9502088 | Constant sensing current for reading resistive memory | Seong-Ook Jung, Sara Choi, Jisu Kim, Taehui Na, Seung H. Kang | 2016-11-22 |
| 9495261 | Systems and methods for reducing memory failures | Dexter Tamio Chun, Deepti Vijayalakshmi Sriramagiri, Mosaddiq Saifuddin, Xiangyu Dong, Sungryul Kim +2 more | 2016-11-15 |
| 9472261 | Systems and methods to refresh DRAM based on temperature and based on calibration data | Dexter Tamio Chun, Yanru Li | 2016-10-18 |
| 9455031 | System and method for MRAM having controlled averagable and isolatable voltage reference | Taehyun Kim | 2016-09-27 |
| 9455014 | Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems | Kangho Lee, Taehyun Kim, Sungryul Kim, Seung H. Kang | 2016-09-27 |
| 9455013 | System and method to trim reference levels in a resistive memory | Taehyun Kim, Sungryul Kim | 2016-09-27 |
| 9431129 | Variable read delay system | Taehyun Kim, Sungryul Kim, Xiangyu Dong | 2016-08-30 |
| 9406354 | System, apparatus, and method for an offset cancelling single ended sensing circuit | Seong-Ook Jung, Taehui Na, Jisu Kim, Seung H. Kang | 2016-08-02 |
| 9401226 | MRAM initialization devices and methods | Hyunsuk Shin, Sungryul Kim | 2016-07-26 |
| 9390779 | System and method of sensing a memory cell | Seong-Ook Jung, Taehui Na, Jisu Kim, Seung H. Kang | 2016-07-12 |
| 9385305 | STT-MRAM design enhanced by switching current induced magnetic field | William Xia, Wenqing Wu, Kendrick Hoy Leong Yuen, Abhishek Banerjee, Xia Li +1 more | 2016-07-05 |
| 9378793 | Integrated MRAM module | Xiangyu Dong, Jungwon Suh | 2016-06-28 |
| 9378081 | Bit remapping system | Xiangyu Dong, Mosaddiq Saifuddin | 2016-06-28 |
| 9378781 | System, apparatus, and method for sense amplifiers | Seong-Ook Jung, Taehui Na, Jisu Kim, Seung H. Kang | 2016-06-28 |
| 9379201 | Electrostatic discharge diodes and methods of forming electrostatic discharge diodes | Vidhya Ramachandran, Brian Matthew Henderson, Shiqun Gu, Chiew-Guan Tan, Taehyun Kim | 2016-06-28 |
| 9372750 | Method and apparatus for non-volatile RAM error re-mapping | Dexter Tamio Chun, Seung H. Kang, Taehyun Kim | 2016-06-21 |
| 9368187 | Insertion-override counter to support multiple memory refresh rates | Xiangyu Dong | 2016-06-14 |
| 9349431 | Systems and methods to refresh storage elements | Mosaddiq Saifuddin | 2016-05-24 |
| 9336847 | Method and apparatus for generating a reference for use with a magnetic tunnel junction | Sungryul Kim, Taehyun Kim | 2016-05-10 |
| 9299457 | Kernel masking of DRAM defects | Dexter Tamio Chun, Yanru Li, Xiangyu Dong, Jungwon Suh, Deepti Vijayalakshmi Sriramagiri | 2016-03-29 |
| 9281039 | System and method to provide a reference cell using magnetic tunnel junction cells | Seong-Ook Jung, Taehui Na, Jisu Kim, Seung H. Kang | 2016-03-08 |
| 9274888 | Method and apparatus for multiple-bit DRAM error recovery | Dexter Tamio Chun, Hyunsuk Shin, Jungwon Suh | 2016-03-01 |
| 9275714 | Read operation of MRAM using a dummy word line | Taehyun Kim, Sungryul Kim, Xiangyu Dong | 2016-03-01 |