Issued Patents 2005
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6967160 | Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness | Paul R. Besser, Simon S. Chan, Fred N. Hause | 2005-11-22 |
| 6966235 | Remote monitoring of critical parameters for calibration of manufacturing equipment and facilities | — | 2005-11-22 |
| 6962857 | Shallow trench isolation process using oxide deposition and anneal | Minh Van Ngo, Ming-Ren Lin, Haihong Wang, Qi Xiang, Jung-Suk Goo | 2005-11-08 |
| 6924182 | Strained silicon MOSFET having reduced leakage and method of its formation | Qi Xiang, Ming-Ren Lin, Minh Van Ngo, Haihong Wang | 2005-08-02 |
| 6921709 | Front side seal to prevent germanium outgassing | Haihong Wang, Qi Xiang | 2005-07-26 |
| 6905923 | Offset spacer process for forming N-type transistors | Haihong Wang, Qi Xiang | 2005-06-14 |
| 6902966 | Low-temperature post-dopant activation process | Bin Yu, Robert B. Ogle, Cyrus E. Tabery, Qi Xiang | 2005-06-07 |
| 6878592 | Selective epitaxy to improve silicidation | Paul R. Besser, Minh Van Ngo, Qi Xiang | 2005-04-12 |
| 6878559 | Measurement of lateral diffusion of diffused layers | Peter G. Borden, G. Jonathan Kluth | 2005-04-12 |
| 6873051 | Nickel silicide with reduced interface roughness | Paul R. Besser, Simon S. Chan, Fred N. Hause | 2005-03-29 |
| 6867428 | Strained silicon NMOS having silicon source/drain extensions and method for its fabrication | Paul R. Besser, Qi Xiang | 2005-03-15 |
| 6867080 | Polysilicon tilting to prevent geometry effects during laser thermal annealing | Robert B. Ogle, Cyrus E. Tabery, Qi Xiang, Bin Yu | 2005-03-15 |
| 6858503 | Depletion to avoid cross contamination | Minh Van Ngo, Ming-Ren Lin, Paul R. Besser, Qi Xiang, Jung-Suk Goo | 2005-02-22 |