Issued Patents 2005
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6962857 | Shallow trench isolation process using oxide deposition and anneal | Minh Van Ngo, Ming-Ren Lin, Eric N. Paton, Haihong Wang, Qi Xiang | 2005-11-08 |
| 6955969 | Method of growing as a channel region to reduce source/drain junction capacitance | Ihsan Djomehri, Srinath Krishnan, Witold P. Maszara, James Pan, Qi Xiang | 2005-10-18 |
| 6943087 | Semiconductor on insulator MOSFET having strained silicon channel | Qi Xiang, James Pan, Ming-Ren Lin | 2005-09-13 |
| 6936516 | Replacement gate strained silicon finFET process | Qi Xiang, James Pan | 2005-08-30 |
| 6929992 | Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift | Ihsan Djomehri, Qi Xiang, James Pan | 2005-08-16 |
| 6902991 | Semiconductor device having a thick strained silicon layer and method of its formation | Qi Xiang, Haihong Wang | 2005-06-07 |
| 6900143 | Strained silicon MOSFETs having improved thermal dissipation | James Pan, Qi Xiang | 2005-05-31 |
| 6872613 | Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure | Qi Xiang, Huicai Zhong, Allison Holbrook, Joong S. Jeon, George Jonathan Kluth | 2005-03-29 |
| 6858503 | Depletion to avoid cross contamination | Minh Van Ngo, Ming-Ren Lin, Paul R. Besser, Qi Xiang, Eric N. Paton | 2005-02-22 |