JP

James Pan

AM AMD: 11 patents #16 of 906Top 2%
Micron: 1 patents #434 of 861Top 55%
📍 Boise, ID: #17 of 564 inventorsTop 4%
🗺 Idaho: #20 of 1,002 inventorsTop 2%
Overall (2005): #673 of 245,428Top 1%
12
Patents 2005

Issued Patents 2005

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
6958271 Method of fabricating a dual-level stacked flash memory cell with a MOSFET storage transistor Ning Cheng, Christy Mein Chu Woo 2005-10-25
6955969 Method of growing as a channel region to reduce source/drain junction capacitance Ihsan Djomehri, Jung-Suk Goo, Srinath Krishnan, Witold P. Maszara, Qi Xiang 2005-10-18
6943087 Semiconductor on insulator MOSFET having strained silicon channel Qi Xiang, Jung-Suk Goo, Ming-Ren Lin 2005-09-13
6936516 Replacement gate strained silicon finFET process Jung-Suk Goo, Qi Xiang 2005-08-30
6929992 Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift Ihsan Djomehri, Qi Xiang, Jung-Suk Goo 2005-08-16
6900143 Strained silicon MOSFETs having improved thermal dissipation Jung-Suk Goo, Qi Xiang 2005-05-31
6893910 One step deposition method for high-k dielectric and metal gate electrode Christy Mei-Chu Woo, Paul R. Besser, Minh Van Ngo, Jinsong Yin 2005-05-17
6881277 Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces 2005-04-19
6864163 Fabrication of dual work-function metal gate structure for complementary field effect transistors Allen S. Yu 2005-03-08
6861350 Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrode Minh Van Ngo, Christy Mei-Chu Woo, Jinsong Yin, Paul R. Besser 2005-03-01
6861325 Methods for fabricating CMOS-compatible lateral bipolar junction transistors Matthew S. Buynoski 2005-03-01
6855982 Self aligned double gate transistor having a strained channel region and process therefor Qi Xiang, Ming-Ren Lin 2005-02-15