PB

Paul R. Besser

AM AMD: 36 patents #6 of 1,053Top 1%
📍 Sunnyvale, CA: #2 of 1,107 inventorsTop 1%
🗺 California: #11 of 28,521 inventorsTop 1%
Overall (2003): #40 of 273,478Top 1%
36
Patents 2003

Issued Patents 2003

Showing 26–36 of 36 patents

Patent #TitleCo-InventorsDate
6555479 Method for forming openings for conductive interconnects Frederick N. Hause, Frank Mauersberger, Errol Todd Ryan, William S. Brennan, John A. Iacoponi +1 more 2003-04-29
6545370 Composite silicon nitride sidewall spacers for reduced nickel silicide bridging Minh Van Ngo, Christy Mei-Chu Woo 2003-04-08
6534869 Method for reducing stress-induced voids for 0.25 &mgr;m micron and smaller semiconductor chip technology by annealing interconnect lines prior to ILD deposition and semiconductor chip made thereby Bryan Tracy, Minh Van Ngo 2003-03-18
6528362 Metal gate with CVD amorphous silicon layer for CMOS devices and method of making with a replacement gate process Qi Xiang, Matthew S. Buynoski 2003-03-04
6518167 Method of forming a metal or metal nitride interface layer between silicon nitride and copper Lu You, Matthew S. Buynoski, Jeremias D. Romero, Pin-Chin Connie Wang, Minh Quoc Tran 2003-02-11
6518154 Method of forming semiconductor devices with differently composed metal-based gate electrodes Matthew S. Buynoski, Qi Xiang 2003-02-11
6518107 Non-arsenic N-type dopant implantation for improved source/drain interfaces with nickel silicides Matthew S. Buynoski, Qi Xiang 2003-02-11
6514844 Sidewall treatment for low dielectric constant (low K) materials by ion implantation Jeremy I. Martin, Eric M. Apelgren, Christian Zistl, Srikantewara Dakshina-Murthy, Jonathan B. Smith +2 more 2003-02-04
6514858 Test structure for providing depth of polish feedback Frederick N. Hause, Frank Mauersberger, Errol Todd Ryan, William S. Brennan, John A. Iacoponi +1 more 2003-02-04
6511911 Metal gate stack with etch stop layer Srikanteswara Dakshina-Murthy 2003-01-28
6511904 Reverse mask and nitride layer deposition for reduction of vertical capacitance variation in multi-layer metallization systems Susan H. Chen 2003-01-28