Issued Patents All Time
Showing 101–125 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8372204 | Susceptor for MOCVD reactor | Shuji Nakamura, Max Batres, Michael Coulter | 2013-02-12 |
| 8368179 | Miscut semipolar optoelectronic device | John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato +3 more | 2013-02-05 |
| 8368109 | Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency | Kenji Iso, Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Shuji Nakamura | 2013-02-05 |
| 8366830 | Susceptor apparatus for inverted type MOCVD reactor | Shuji Nakamura, Max Batres, Michael Coulter | 2013-02-05 |
| 8357925 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, James S. Speck, Shuji Nakamura | 2013-01-22 |
| 8344611 | Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications | Won-Bin Im, Ram Seshadri | 2013-01-01 |
| 8334151 | Method for fabricating a direct wafer bonded optoelectronic device | Akihiko Murai, Christina Ye Chen, Daniel Bryce Thompson, Lee McCarthy, Shuji Nakamura +1 more | 2012-12-18 |
| 8299452 | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes | Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, James S. Speck, Shuji Nakamura | 2012-10-30 |
| 8294166 | Transparent light emitting diodes | Shuji Nakamura, Hirokuni Asamizu | 2012-10-23 |
| 8278128 | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut | Hisashi Masui, Hisashi Yamada, Kenji Iso, Asako Hirai, Makoto Saito +2 more | 2012-10-02 |
| 8263500 | Photoelectrochemical etching for laser facets | Adele Tamboli, Evelyn L. Hu, Arpan Chakraborty | 2012-09-11 |
| 8254423 | (Al,Ga,In)N diode laser fabricated at reduced temperature | Daniel A. Cohen, Shuji Nakamura | 2012-08-28 |
| 8227819 | Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Hong Zhong, Anurag Tyagi, James S. Speck, Shuji Nakamura | 2012-07-24 |
| 8211723 | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes | Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, Robert M. Farrell, Daniel A. Cohen +2 more | 2012-07-03 |
| 8203159 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Hong Zhong, John F. Kaeding, Rajat Sharma, James S. Speck, Shuji Nakamura | 2012-06-19 |
| 8193079 | Method for conductivity control of (Al,In,Ga,B)N | John F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong +1 more | 2012-06-05 |
| 8188458 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Stacia Keller, Tal Margalith, James S. Speck, Shuji Nakamura +1 more | 2012-05-29 |
| 8183557 | (Al,In,Ga,B)N device structures on a patterned substrate | Michael Iza, Hitoshi Sato, Eu Jin Hwang, Shuji Nakamura | 2012-05-22 |
| 8178373 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices | Mathew C. Schmidt, Kwang Choong Kim, Hitsohi Sato, James S. Speck, Shuji Nakamura | 2012-05-15 |
| 8163203 | Yellow emitting phosphors based on Ce3+-doped aluminate and via solid solution for solid-state lighting applications | Won-Bin Im, Ram Seshadri | 2012-04-24 |
| 8158497 | Planar nonpolar m-plane group III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso +2 more | 2012-04-17 |
| 8148713 | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes | Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, James S. Speck, Shuji Nakamura | 2012-04-03 |
| 8133322 | Apparatus for inverted multi-wafer MOCVD fabrication | Shuji Nakamura, Max Batres, Michael Coulter | 2012-03-13 |
| 8128756 | Technique for the growth of planar semi-polar gallium nitride | Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, James S. Speck, Shuji Nakamua | 2012-03-06 |
| 8124991 | Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency | Kenji Iso, Hirokuni Asamizu, Makoto Saito, Hitoshi Sato, Shuji Nakamura | 2012-02-28 |