Issued Patents All Time
Showing 76–100 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8709925 | Method for conductivity control of (Al,In,Ga,B)N | John F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong +1 more | 2014-04-29 |
| 8691671 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso +2 more | 2014-04-08 |
| 8692105 | III-V nitride-based thermoelectric device | Hiroaki Ohta, Alexander Sztein, Shuji Nakamura | 2014-04-08 |
| 8686466 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2014-04-01 |
| 8686397 | Low droop light emitting diode structure on gallium nitride semipolar substrates | Shuji Nakamura, Shinichi Tanaka, Daniel F. Feezell, Yuji Zhao, Chih-Chien Pan | 2014-04-01 |
| 8679876 | Laser diode and method for fabricating same | Arpan Chakraborty, Monica Hansen, Shuji Nakamura, George R. Brandes | 2014-03-25 |
| 8674375 | Roughened high refractive index layer/LED for high light extraction | James Ibbetson, Shuji Nakamura | 2014-03-18 |
| 8653503 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, James S. Speck, Shuji Nakamura | 2014-02-18 |
| 8647967 | Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same | Makoto Saito, Shin-Ichiro Kawabata, Derrick S. Kamber, James S. Speck, Shuji Nakamura | 2014-02-11 |
| 8643024 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N | Arpan Chakraborty, Kwang Choong Kim, James S. Speck, Umesh Mishra | 2014-02-04 |
| 8637334 | High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution | Daniel Bryce Thompson, Jacob J. Richardson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange +1 more | 2014-01-28 |
| 8624281 | Optical designs for high-efficacy white-light emitting diodes | Frederic Stephane Diana, Shuji Nakamura | 2014-01-07 |
| 8592802 | (Al, In, Ga, B)N device structures on a patterned substrate | Michael Iza, Hitoshi Sato, Eu Jin Hwang, Shuji Nakamura | 2013-11-26 |
| 8541788 | LED with current confinement structure and surface roughening | Shuji Nakamura, Max Batres | 2013-09-24 |
| 8541869 | Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates | Shuji Nakamura, James S. Speck, Anurag Tyagi | 2013-09-24 |
| 8536618 | Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays | Jacob J. Richardson, Daniel Bryce Thompson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange +1 more | 2013-09-17 |
| 8535565 | Solid solution phosphors based on oxyfluoride and white light emitting diodes including the phosphors for solid state white lighting applications | Won-Bin Im, Ram Seshadri | 2013-09-17 |
| 8524012 | Technique for the growth of planar semi-polar gallium nitride | Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, James S. Speck, Shuji Nakamua | 2013-09-03 |
| 8502246 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, James S. Speck, Shuji Nakamura +1 more | 2013-08-06 |
| 8481991 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck +2 more | 2013-07-09 |
| 8450192 | Growth of planar, non-polar, group-III nitride films | Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, James S. Speck +1 more | 2013-05-28 |
| 8410499 | LED with a current confinement structure aligned with a contact | Shuji Nakamura, Max Batres | 2013-04-02 |
| 8410490 | LED with current confinement structure and surface roughening | Shuji Nakamura, Max Batres | 2013-04-02 |
| 8405128 | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Hitoshi Sato, John F. Kaeding, Michael Iza, Benjamin A. Haskell, Troy J. Baker +1 more | 2013-03-26 |
| 8390011 | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate | Claude C. A. Weisbuch, Aurelien J. F. David, James S. Speck | 2013-03-05 |