| 12336336 |
Indium-gallium-nitride light emitting diodes with light reflecting mirrors |
Michel Khoury, Lan Yu, Michael Chudzik |
2025-06-17 |
|
| 11908974 |
Light emitting diodes containing deactivated regions and methods of making the same |
Fariba Danesh, Michael J. Cich, Zhen Chen |
2024-02-20 |
|
| 11837683 |
Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency |
Michael Chudzik, Michel Khoury |
2023-12-05 |
$45,995,000 |
| 11710805 |
Light emitting diode containing oxidized metal contacts |
Fariba Danesh, Tsun LAU, Richard P. Schneider, Michael Jansen |
2023-07-25 |
|
| 11264539 |
Light emitting diodes containing deactivated regions and methods of making the same |
Fariba Danesh, Michael J. Cich, Zhen Chen |
2022-03-01 |
|
| 11127720 |
Pixel repair method for a direct view display device |
Ansel Saneyuki Reed |
2021-09-21 |
|
| 11069837 |
Sub pixel light emitting diodes for direct view display and methods of making the same |
Fariba Danesh, Michael J. Cich, Zhen Chen |
2021-07-20 |
|
| 10804436 |
Light emitting diode containing oxidized metal contacts |
Fariba Danesh, Tsun LAU, Richard P. Schneider, Michael Jansen |
2020-10-13 |
|
| 10707374 |
Etendue enhancement for light emitting diode subpixels |
Fariba Danesh, Benjamin Leung, Tsun LAU, Zulal TEZCAN, Miao-Chan Tsai +1 more |
2020-07-07 |
|
| 10249786 |
Thin film and substrate-removed group III-nitride based devices and method |
Zhihong Yang, Thomas Wunderer |
2019-04-02 |
$3,038,000 |
| 10199360 |
Wire bond free wafer level LED |
Bernd Keller, Ashay Chitnis, Nicholas W. Medendorp, Jr., James Ibbetson |
2019-02-05 |
$21,245,000 |
| 9634191 |
Wire bond free wafer level LED |
Bernd Keller, Ashay Chitnis, Nicholas W. Medendorp, Jr., James Ibbetson |
2017-04-25 |
$3,593,000 |
| 9076926 |
Gallium and nitrogen containing trilateral configuration for optical devices |
Aurelien J. F. David |
2015-07-07 |
|
| 8912025 |
Method for manufacture of bright GaN LEDs using a selective removal process |
Andrew Felker, Rafael Aldaz |
2014-12-16 |
|
| 8772792 |
LED with surface roughening |
Steven P. DenBaars, Shuji Nakamura |
2014-07-08 |
$12,242,000 |
| 8686431 |
Gallium and nitrogen containing trilateral configuration for optical devices |
Aurelien J. F. David |
2014-04-01 |
|
| 8617909 |
LED with substrate modifications for enhanced light extraction and method of making same |
James Ibbetson, Ting Li, Adam William Saxler |
2013-12-31 |
$12,577,000 |
| 8541788 |
LED with current confinement structure and surface roughening |
Steven P. DenBaars, Shuji Nakamura |
2013-09-24 |
$25,794,000 |
| 8410490 |
LED with current confinement structure and surface roughening |
Steven P. DenBaars, Shuji Nakamura |
2013-04-02 |
$5,206,000 |
| 8410499 |
LED with a current confinement structure aligned with a contact |
Steven P. DenBaars, Shuji Nakamura |
2013-04-02 |
$5,206,000 |
| 8372204 |
Susceptor for MOCVD reactor |
Shuji Nakamura, Steven P. DenBaars, Michael Coulter |
2013-02-12 |
$52,956,000 |
| 8366830 |
Susceptor apparatus for inverted type MOCVD reactor |
Shuji Nakamura, Steven P. DenBaars, Michael Coulter |
2013-02-05 |
$25,465,000 |
| 8133322 |
Apparatus for inverted multi-wafer MOCVD fabrication |
Shuji Nakamura, Steven P. DenBaars, Michael Coulter |
2012-03-13 |
$42,147,000 |
| 8034647 |
LED with substrate modifications for enhanced light extraction and method of making same |
James Ibbetson, Ting Li, Adam William Saxler |
2011-10-11 |
$7,604,000 |
| 7534633 |
LED with substrate modifications for enhanced light extraction and method of making same |
James Ibbetson, Ting Li |
2009-05-19 |
$14,595,000 |
