| 12368074 |
Manufacturing method of semiconductor structure comprising a gap and semiconductor structure comprising a gap |
Hou-Hong Chou |
2025-07-22 |
|
| 10043942 |
Vertical multi-junction light emitting diode |
Thomas Yuan |
2018-08-07 |
|
| 9362459 |
High reflectivity mirrors and method for making same |
Sten Heikman, Matthew Jacob-Mitos, James Ibbetson |
2016-06-07 |
$4,089,000 |
| 8759868 |
Ultra-thin ohmic contacts for p-type nitride light emitting devices |
Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael John Bergmann, David T. Emerson +1 more |
2014-06-24 |
$12,383,000 |
| 8710536 |
Composite high reflectivity layer |
James Ibbetson, Monica Hansen |
2014-04-29 |
$19,716,000 |
| 8680556 |
Composite high reflectivity layer |
James Ibbetson, Bernd Keller |
2014-03-25 |
$9,768,000 |
| 8617909 |
LED with substrate modifications for enhanced light extraction and method of making same |
Max Batres, James Ibbetson, Adam William Saxler |
2013-12-31 |
$12,577,000 |
| 8598609 |
Composite high reflectivity layer |
James Ibbetson, Monica Hansen |
2013-12-03 |
$9,238,000 |
| 8507924 |
Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming |
— |
2013-08-13 |
$12,263,000 |
| 8384115 |
Bond pad design for enhancing light extraction from LED chips |
— |
2013-02-26 |
$12,448,000 |
| 8089090 |
Ultra-thin ohmic contacts for p-type nitride light emitting devices |
Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael John Bergmann, David T. Emerson +1 more |
2012-01-03 |
$30,496,000 |
| 8034647 |
LED with substrate modifications for enhanced light extraction and method of making same |
Max Batres, James Ibbetson, Adam William Saxler |
2011-10-11 |
$7,604,000 |
| 8017963 |
Light emitting diode with a dielectric mirror having a lateral configuration |
Matthew Donofrio, John Edmond, James Ibbetson |
2011-09-13 |
$18,436,000 |
| 7932106 |
Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming |
— |
2011-04-26 |
$14,041,000 |
| 7915629 |
Composite high reflectivity layer |
Monica Hansen, James Ibbetson |
2011-03-29 |
$9,949,000 |
| 7893490 |
HVNMOS structure for reducing on-resistance and preventing BJT triggering |
Yu-Hui Huang, Fu-Hsin Chen |
2011-02-22 |
$4,974,000 |
| 7534633 |
LED with substrate modifications for enhanced light extraction and method of making same |
Max Batres, James Ibbetson |
2009-05-19 |
$14,595,000 |
| 7508032 |
High voltage device with low on-resistance |
Puo-Yu Chiang, Tsung-Yi Huang, Fu-Hsin Chen, Chung-Yeh Wu |
2009-03-24 |
$15,513,000 |
| 6972438 |
Light emitting diode with porous SiC substrate and method for fabricating |
James Ibbetson, Bernd Keller |
2005-12-06 |
$7,880,000 |
| 6444551 |
N-type buried layer drive-in recipe to reduce pits over buried antimony layer |
Wen-Yu Ku, Fang Lu, Cheng-Chung Wang |
2002-09-03 |
$2,852,000 |
