Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12368074 | Manufacturing method of semiconductor structure comprising a gap and semiconductor structure comprising a gap | Hou-Hong Chou | 2025-07-22 |
| 10043942 | Vertical multi-junction light emitting diode | Thomas Yuan | 2018-08-07 |
| 9362459 | High reflectivity mirrors and method for making same | Sten Heikman, Matthew Jacob-Mitos, James Ibbetson | 2016-06-07 |
| 8759868 | Ultra-thin ohmic contacts for p-type nitride light emitting devices | Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael John Bergmann, David T. Emerson +1 more | 2014-06-24 |
| 8710536 | Composite high reflectivity layer | James Ibbetson, Monica Hansen | 2014-04-29 |
| 8680556 | Composite high reflectivity layer | James Ibbetson, Bernd Keller | 2014-03-25 |
| 8617909 | LED with substrate modifications for enhanced light extraction and method of making same | Max Batres, James Ibbetson, Adam William Saxler | 2013-12-31 |
| 8598609 | Composite high reflectivity layer | James Ibbetson, Monica Hansen | 2013-12-03 |
| 8507924 | Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming | — | 2013-08-13 |
| 8384115 | Bond pad design for enhancing light extraction from LED chips | — | 2013-02-26 |
| 8089090 | Ultra-thin ohmic contacts for p-type nitride light emitting devices | Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael John Bergmann, David T. Emerson +1 more | 2012-01-03 |
| 8034647 | LED with substrate modifications for enhanced light extraction and method of making same | Max Batres, James Ibbetson, Adam William Saxler | 2011-10-11 |
| 8017963 | Light emitting diode with a dielectric mirror having a lateral configuration | Matthew Donofrio, John Edmond, James Ibbetson | 2011-09-13 |
| 7932106 | Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming | — | 2011-04-26 |
| 7915629 | Composite high reflectivity layer | Monica Hansen, James Ibbetson | 2011-03-29 |
| 7893490 | HVNMOS structure for reducing on-resistance and preventing BJT triggering | Yu-Hui Huang, Fu-Hsin Chen | 2011-02-22 |
| 7534633 | LED with substrate modifications for enhanced light extraction and method of making same | Max Batres, James Ibbetson | 2009-05-19 |
| 7508032 | High voltage device with low on-resistance | Puo-Yu Chiang, Tsung-Yi Huang, Fu-Hsin Chen, Chung-Yeh Wu | 2009-03-24 |
| 6972438 | Light emitting diode with porous SiC substrate and method for fabricating | James Ibbetson, Bernd Keller | 2005-12-06 |
| 6444551 | N-type buried layer drive-in recipe to reduce pits over buried antimony layer | Wen-Yu Ku, Fang Lu, Cheng-Chung Wang | 2002-09-03 |