Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

US Patent 8507924 · Granted Aug 13, 2013

Estimated economic value: $12,263,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Manufacturing method of semiconductor structure comprising a gap and semiconduct2025
Vertical multi-junction light emitting diode2018
High reflectivity mirrors and method for making same2016
Ultra-thin ohmic contacts for p-type nitride light emitting devices2014
Composite high reflectivity layer2014
Composite high reflectivity layer2014
LED with substrate modifications for enhanced light extraction and method of mak2013
Composite high reflectivity layer2013
Bond pad design for enhancing light extraction from LED chips2013
Ultra-thin ohmic contacts for p-type nitride light emitting devices2012
LED with substrate modifications for enhanced light extraction and method of mak2011
Light emitting diode with a dielectric mirror having a lateral configuration2011