Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12166108 | Strained transistor with conductive plate | Chan-yu HUNG, Chia-Cheng Ho, Fei-Yun Chen, Yu-Chang Jong, Tun-Yi Ho | 2024-12-10 |
| 10177225 | Electronic component and manufacturing method thereof | Yan-Liang Ji, Cheng-Hua LIN | 2019-01-08 |
| 10008593 | Radio frequency semiconductor device | Chih-Chung Chiu | 2018-06-26 |
| 9570630 | Schottky diode structure | — | 2017-02-14 |
| 9029223 | MOS device with isolated drain and method for fabricating the same | Yan-Liang Ji | 2015-05-12 |
| 9006068 | MOS device with isolated drain and method for fabricating the same | Yan-Liang Ji | 2015-04-14 |
| 9006825 | MOS device with isolated drain and method for fabricating the same | Yan-Liang Ji | 2015-04-14 |
| 8507988 | High voltage devices, systems, and methods for forming the high voltage devices | Chih-Wen Yao, Robert S. J. Pan, Ruey-Hsin Liu, Hsueh-Liang Chou, Chi-Chih Chen +1 more | 2013-08-13 |
| 8389341 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Tsung-Yi Huang, Ruey-Hsin Liu, Shun-Liang Hsu, Chyi-Chyuan Huang, Fu-Hsin Chen +1 more | 2013-03-05 |
| 8158475 | Gate electrodes of HVMOS devices having non-uniform doping concentrations | Ru-Yi Su, Jeng Gong, Tsung-Yi Huang, Chun Lin Tsai, Chien-Chih Chou | 2012-04-17 |
| 8159029 | High voltage device having reduced on-state resistance | Ru-Yi Su, Jeng Gong, Tsung-Yi Huang, Chun Lin Tsai, Chien-Chih Chou | 2012-04-17 |
| 8129783 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Tsung-Yi Huang, Ruey-Hsin Liu, Shun-Liang Hsu | 2012-03-06 |
| 7989890 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Tsung-Yi Huang, Ruey-Hsin Liu, Shun-Liang Hsu, Chyi-Chyuan Huang, Fu-Hsin Chen +1 more | 2011-08-02 |
| 7928508 | Disconnected DPW structures for improving on-state performance of MOS devices | Chih-Wen Yao, Tsai Chun Lin, Tsung-Yi Huang | 2011-04-19 |
| 7816744 | Gate electrodes of HVMOS devices having non-uniform doping concentrations | Ru-Yi Su, Jeng Gong, Tsung-Yi Huang, Chun Lin Tsai, Chien-Chih Chou | 2010-10-19 |
| 7781859 | Schottky diode structures having deep wells for improving breakdown voltages | Tsai Chun Lin, Chih-Wen Yao, David Ho | 2010-08-24 |
| 7768071 | Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices | Eric Huang, Tsung-Yi Huang, Fu-Hsin Chen, Chyi-Chyuan Huang | 2010-08-03 |
| 7508032 | High voltage device with low on-resistance | Tsung-Yi Huang, Fu-Hsin Chen, Ting Li, Chung-Yeh Wu | 2009-03-24 |
| 7476591 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Tsung-Yi Huang, Ruey-Hsin Liu, Shun-Liang Hsu | 2009-01-13 |