CT

Chun Lin Tsai

TSMC: 137 patents #145 of 12,232Top 2%
📍 Jinshanmian, TW: #7 of 466 inventorsTop 2%
Overall (All Time): #7,457 of 4,157,543Top 1%
137
Patents All Time

Issued Patents All Time

Showing 1–25 of 137 patents

Patent #TitleCo-InventorsDate
12419074 Barrier structure configured to increase performance of III-V devices Yun-Hsiang Wang, Jiun-Lei Jerry Yu, Po-Chih Chen, Chia-Ling Yeh, Ching-Yu Chen 2025-09-16
12388039 3D IC comprising semiconductor substrates with different bandgaps Yao-Chung Chang, Shih-Chien Liu, Chia-Jui Yu 2025-08-12
12363938 Cap structure coupled to source to reduce saturation current in HEMT device Ming-Cheng Lin, Chen-Bau Wu, Haw-Yun Wu, Liang-Yu Su, Yun-Hsiang Wang 2025-07-15
12324211 Ring transistor structure Aurelien Gauthier Brun, Jiun-Lei Jerry Yu, Po-Chih Chen, Yun-Hsiang Wang 2025-06-03
12278272 Source leakage current suppression by source surrounding gate structure Aurelien Gauthier Brun, Jiun-Lei Jerry Yu, Po-Chih Chen, Yun-Hsiang Wang 2025-04-15
12272741 Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance Man-Ho Kwan, Fu-Wei Yao, Jiun-Lei Jerry Yu, Ting-Fu Chang 2025-04-08
12267006 Forming integrated electronic devices for converting and downscaling alternating current Yen-Ku Lin, Ru-Yi Su, Haw-Yun Wu 2025-04-01
12230690 Method of forming a high electron mobility transistor Chun-Wei Hsu, Jiun-Lei Jerry Yu, Fu-Wei Yao, Chen-Ju Yu, Fu-Chih Yang 2025-02-18
12132088 Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device Shih-Chien Liu, Yao-Chung Chang 2024-10-29
12107156 Semiconductor structure, HEMT structure and method of forming the same Yao-Chung Chang, Po-Chih Chen, Jiun-Lei Jerry Yu 2024-10-01
12100757 Cap structure coupled to source to reduce saturation current in HEMT device Ming-Cheng Lin, Chen-Bau Wu, Haw-Yun Wu, Liang-Yu Su, Yun-Hsiang Wang 2024-09-24
12094838 Crack stop ring trench to prevent epitaxy crack propagation Jiun-Yu Chen, Yun-Hsiang Wang, Chia-Hsun Wu, Jiun-Lei Jerry Yu, Po-Chih Chen 2024-09-17
12087820 Semiconductor device having a plurality of III-V semiconductor layers Yu-Syuan Lin, Jiun-Lei Jerry Yu, Ming-Cheng Lin 2024-09-10
12046554 Device layout design for improving device performance Shih-Pang Chang, Haw-Yun Wu, Yao-Chung Chang 2024-07-23
12046537 Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) Yun-Hsiang Wang, Jiun-Lei Jerry Yu, Po-Chih Chen 2024-07-23
11942543 Semiconductor device structure with high voltage device Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin +4 more 2024-03-26
11908905 Electrode structure for vertical group III-V device Yao-Chung Chang, Ru-Yi Su, Wei Wang, Wei-Chen Yang 2024-02-20
11862675 High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device Karthick Murukesan, Wen-Chih Chiang, Ker Hsiao Huo, Kuo-Ming Wu, Po-Chih Chen +5 more 2024-01-02
11854909 Semiconductor structure and method for manufacturing thereof Man-Ho Kwan, Fu-Wei Yao, Ru-Yi Su, Alexander Kalnitsky 2023-12-26
11843047 Integration of p-channel and n-channel E-FET III-V devices without parasitic channels Man-Ho Kwan, Fu-Wei Yao, Jiun-Lei Jerry Yu, Ting-Fu Chang 2023-12-12
11824109 Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance Man-Ho Kwan, Fu-Wei Yao, Jiun-Lei Jerry Yu, Ting-Fu Chang 2023-11-21
11804538 Method of forming a high electron mobility transistor Chun-Wei Hsu, Jiun-Lei Jerry Yu, Fu-Wei Yao, Chen-Ju Yu, Fu-Chih Yang 2023-10-31
11798899 Crack stop ring trench to prevent epitaxy crack propagation Jiun-Yu Chen, Yun-Hsiang Wang, Chia-Hsun Wu, Jiun-Lei Jerry Yu, Po-Chih Chen 2023-10-24
11791388 Source leakage current suppression by source surrounding gate structure Aurelien Gauthier Brun, Jiun-Lei Jerry Yu, Po-Chih Chen, Yun-Hsiang Wang 2023-10-17
11742419 Cap structure coupled to source to reduce saturation current in HEMT device Ming-Cheng Lin, Chen-Bau Wu, Haw-Yun Wu, Liang-Yu Su, Yun-Hsiang Wang 2023-08-29