Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12363938 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Yun-Hsiang Wang | 2025-07-15 |
| 12317530 | Semiconductor device and manufacturing method thereof | Feng Han, Lei Shi, Hung-Chih Tsai, Hang Fan | 2025-05-27 |
| 12100757 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Yun-Hsiang Wang | 2024-09-24 |
| 11978810 | Method for forming an IC including a varactor with reduced surface field region | Chih-Wen Yao, Hsiao-Chin Tuan, Ming-Ta Lei | 2024-05-07 |
| 11973076 | Electrostatic discharge protection circuit and semiconductor circuit | Ming-Fang Lai, Hang Fan | 2024-04-30 |
| 11764288 | Semiconductor device and manufacturing method thereof | Feng Han, Lei Shi, Hung-Chih Tsai, Hang Fan | 2023-09-19 |
| 11742419 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Yun-Hsiang Wang | 2023-08-29 |
| 11437466 | Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same | Hung-Chih Tsai, Ruey-Hsin Liu, Ming-Ta Lei, Chang-Tai YANG, Te-Yin Hsia +2 more | 2022-09-06 |
| 11380779 | Semiconductor device and manufacturing method thereof | Feng Han, Lei Shi, Hung-Chih Tsai, Hang Fan | 2022-07-05 |
| 11195945 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Yun-Hsiang Wang | 2021-12-07 |
| 11018266 | Reduced surface field layer in varactor | Chih-Wen Yao, Hsiao-Chin Tuan, Ming-Ta Lei | 2021-05-25 |
| 10978445 | Electrostatic discharge protection circuit and semiconductor circuit | Ming-Fang Lai, Hang Fan | 2021-04-13 |
| 9425176 | Cascode transistor device and manufacturing method thereof | Jian Huang, Chih-Hao Wang | 2016-08-23 |