Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12419074 | Barrier structure configured to increase performance of III-V devices | Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen, Chia-Ling Yeh, Ching-Yu Chen | 2025-09-16 |
| 12363938 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Liang-Yu Su | 2025-07-15 |
| 12324211 | Ring transistor structure | Aurelien Gauthier Brun, Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen | 2025-06-03 |
| 12278272 | Source leakage current suppression by source surrounding gate structure | Aurelien Gauthier Brun, Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen | 2025-04-15 |
| 12100757 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Liang-Yu Su | 2024-09-24 |
| 12094838 | Crack stop ring trench to prevent epitaxy crack propagation | Jiun-Yu Chen, Chun Lin Tsai, Chia-Hsun Wu, Jiun-Lei Jerry Yu, Po-Chih Chen | 2024-09-17 |
| 12046537 | Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) | Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen | 2024-07-23 |
| 11798899 | Crack stop ring trench to prevent epitaxy crack propagation | Jiun-Yu Chen, Chun Lin Tsai, Chia-Hsun Wu, Jiun-Lei Jerry Yu, Po-Chih Chen | 2023-10-24 |
| 11791388 | Source leakage current suppression by source surrounding gate structure | Aurelien Gauthier Brun, Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen | 2023-10-17 |
| 11742419 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Liang-Yu Su | 2023-08-29 |
| 11715792 | Barrier structure configured to increase performance of III-V devices | Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen, Chia-Ling Yeh, Ching-Yu Chen | 2023-08-01 |
| 11664431 | Ring transistor structure | Aurelien Gauthier Brun, Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen | 2023-05-30 |
| 11521915 | Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) | Chun Lin Tsai, Jiun-Lei Jerry Yu, Po-Chih Chen | 2022-12-06 |
| 11195945 | Cap structure coupled to source to reduce saturation current in HEMT device | Ming-Cheng Lin, Chen-Bau Wu, Chun Lin Tsai, Haw-Yun Wu, Liang-Yu Su | 2021-12-07 |