Issued Patents All Time
Showing 51–75 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9130119 | Non-polar and semi-polar light emitting devices | Mathew C. Schmidt, Kwang Choong Kim, James S. Speck, Shuji Nakamura | 2015-09-08 |
| 9077151 | Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction | Po Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel Arthur Haeger, Hiroaki Ohta +3 more | 2015-07-07 |
| 9076927 | (In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers | Stacia Keller, Carl Joseph Neufeld, Umesh Mishra | 2015-07-07 |
| 9054498 | (Al,Ga,In)N diode laser fabricated at reduced temperature | Daniel A. Cohen, Shuji Nakamura | 2015-06-09 |
| 9040327 | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes | Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, Robert M. Farrell, Daniel A. Cohen +2 more | 2015-05-26 |
| 9040326 | High light extraction efficiency nitride based light emitting diode by surface roughening | Hong Zhong, Anurag Tyagi, Kenneth Vampola, James S. Speck, Shuji Nakamura | 2015-05-26 |
| 8956896 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices | Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, James S. Speck, Shuji Nakamura | 2015-02-17 |
| 8882935 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, James S. Speck, Shuji Nakamura +1 more | 2014-11-11 |
| 8866126 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck +2 more | 2014-10-21 |
| 8866149 | Method for the reuse of gallium nitride epitaxial substrates | Casey O. Holder, Daniel F. Feezell, Shuji Nakamura | 2014-10-21 |
| 8860051 | Textured phosphor conversion layer light emitting diode | Natalie N. Fellows, Shuji Nakamura | 2014-10-14 |
| 8853669 | Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning | James S. Speck, Anurag Tyagi, Shuji Nakamura | 2014-10-07 |
| 8841691 | Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays | Jacob J. Richardson, Daniel Bryce Thompson, Ingrid Koslow, Jun Seok Ha, Frederick F. Lange +1 more | 2014-09-23 |
| 8835959 | Transparent light emitting diodes | Shuji Nakamura, Hirokuni Asamizu | 2014-09-16 |
| 8835200 | High light extraction efficiency nitride based light emitting diode by surface roughening | Hong Zhong, Anurag Tyagi, Kenneth Vampola, James S. Speck, Shuji Nakamura | 2014-09-16 |
| 8829546 | Rare earth doped layer or substrate for light conversion | Eric Tarsa, Michael Mack, Bernd Keller, Brian Thibeault, Adam William Saxler | 2014-09-09 |
| 8809867 | Dislocation reduction in non-polar III-nitride thin films | Michael D. Craven, James S. Speck, Shuji Nakamura | 2014-08-19 |
| 8795440 | Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) | Bilge M. Imer, James S. Speck, Shuji Nakamura | 2014-08-05 |
| 8795430 | Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates | Robert M. Farrell, Michael Iza, James S. Speck, Shuji Nakamura | 2014-08-05 |
| 8791000 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso +2 more | 2014-07-29 |
| 8790943 | (Al,Ga,In)N diode laser fabricated at reduced temperature | Daniel A. Cohen, Shuji Nakamura | 2014-07-29 |
| 8772792 | LED with surface roughening | Shuji Nakamura, Max Batres | 2014-07-08 |
| 8772758 | Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N | Matthew T. Hardy, Po Shan Hsu, James S. Speck, Shuji Nakamura | 2014-07-08 |
| 8761218 | Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes | You-Da Lin, Hiroaki Ohta, Shuji Nakamura, James S. Speck | 2014-06-24 |
| 8729671 | Method for increasing the area of non-polar and semi-polar nitride substrates | Asako Hirai, James S. Speck, Shuji Nakamura | 2014-05-20 |