Issued Patents All Time
Showing 126–150 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8114698 | High light extraction efficiency nitride based light emitting diode by surface roughening | Hong Zhong, Anurag Tyagi, Kenneth Vampola, James S. Speck, Shuji Nakamura | 2012-02-14 |
| 8110482 | Miscut semipolar optoelectronic device | John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato +3 more | 2012-02-07 |
| 8105919 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N | Arpan Chakraborty, Kwang Choong Kim, James S. Speck, Umesh Mishra | 2012-01-31 |
| 8097481 | Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) | Bilge M. Imer, James S. Speck, Shuji Nakamura | 2012-01-17 |
| 8084763 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, James S. Speck, Shuji Nakamura | 2011-12-27 |
| 8080469 | Method for increasing the area of non-polar and semi-polar nitride substrates | Asako Hirai, James S. Speck, Shuji Nakamura | 2011-12-20 |
| 8053264 | Photoelectrochemical etching of P-type semiconductor heterostructures | Adele Tamboli, Evelyn L. Hu, Mathew C. Schmidt, Shuji Nakamura | 2011-11-08 |
| 8050304 | Group-III nitride based laser diode and method for fabricating same | Shuji Nakamura, Monica Hansen | 2011-11-01 |
| 8044383 | Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Hong Zhong, Anurag Tyagi, James S. Speck, Shuji Nakamura | 2011-10-25 |
| 8044417 | Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation | Hisashi Masui, Hisashi Yamada, Kenji Iso, James S. Speck, Shuji Nakamura | 2011-10-25 |
| 8035117 | Multi element, multi color solid state LED/laser | Eric Tarsa, Michael Mack, Bernd Keller, Brian Thibeault | 2011-10-11 |
| 8022423 | Standing transparent mirrorless light emitting diode | Shuji Nakamura | 2011-09-20 |
| 7994527 | High light extraction efficiency light emitting diode (LED) | Shuji Nakamura, Hisashi Masui, Natalie N. Fellows, Akihiko Murai | 2011-08-09 |
| 7982208 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Stacia Keller, Tal Margalith, James S. Speck, Shuji Nakamura +1 more | 2011-07-19 |
| 7977694 | High light extraction efficiency light emitting diode (LED) with emitters within structured materials | Aurelien J. F. David, Claude C. A. Weisbuch, Stacia Keller | 2011-07-12 |
| 7956371 | High efficiency light emitting diode (LED) | Shuji Nakamura, James S. Speck | 2011-06-07 |
| 7956360 | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Melvin McLaurin, James S. Speck, Shuji Nakamura | 2011-06-07 |
| 7955983 | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) | Bilge M. Imer, James S. Speck | 2011-06-07 |
| 7868341 | Optical designs for high-efficacy white-light emitting diodes | Frederic Stephane Diana, Shuji Nakamura | 2011-01-11 |
| 7858996 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Hong Zhong, John F. Kaeding, Rajat Sharma, James S. Speck, Shuji Nakamura | 2010-12-28 |
| 7847293 | Growth of reduced dislocation density non-polar gallium nitride | Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, James S. Speck, Shuji Nakamura | 2010-12-07 |
| 7846757 | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2010-12-07 |
| 7842527 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices | Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, James S. Speck, Shuji Nakamura | 2010-11-30 |
| 7839903 | Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers | Robert M. Farrell, Mathew C. Schmidt, Kwang Choong Kim, Hisashi Masui, Daniel F. Feezell +2 more | 2010-11-23 |
| 7825006 | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method | Shuji Nakamura | 2010-11-02 |