Issued Patents All Time
Showing 76–100 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8227819 | Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Hong Zhong, Anurag Tyagi, Steven P. DenBaars, Shuji Nakamura | 2012-07-24 |
| 8211723 | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes | Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, Robert M. Farrell, Daniel A. Cohen +2 more | 2012-07-03 |
| 8203159 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Hong Zhong, John F. Kaeding, Rajat Sharma, Steven P. DenBaars, Shuji Nakamura | 2012-06-19 |
| 8188687 | Light emitting device for AC power operation | Chung Hoon Lee, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee | 2012-05-29 |
| 8188458 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, Shuji Nakamura +1 more | 2012-05-29 |
| 8178373 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices | Mathew C. Schmidt, Kwang Choong Kim, Hitsohi Sato, Steven P. DenBaars, Shuji Nakamura | 2012-05-15 |
| 8158497 | Planar nonpolar m-plane group III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso +2 more | 2012-04-17 |
| 8148244 | Lateral growth method for defect reduction of semipolar nitride films | Troy J. Baker, Benjamin A. Haskell, Shuji Nakamura | 2012-04-03 |
| 8148713 | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes | Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, Shuji Nakamura | 2012-04-03 |
| 8128756 | Technique for the growth of planar semi-polar gallium nitride | Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, Shuji Nakamua | 2012-03-06 |
| 8114698 | High light extraction efficiency nitride based light emitting diode by surface roughening | Hong Zhong, Anurag Tyagi, Kenneth Vampola, Steven P. DenBaars, Shuji Nakamura | 2012-02-14 |
| 8110482 | Miscut semipolar optoelectronic device | John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato +3 more | 2012-02-07 |
| 8105919 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N | Arpan Chakraborty, Kwang Choong Kim, Steven P. DenBaars, Umesh Mishra | 2012-01-31 |
| 8097481 | Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) | Bilge M. Imer, Steven P. DenBaars, Shuji Nakamura | 2012-01-17 |
| 8084763 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, Steven P. DenBaars, Shuji Nakamura | 2011-12-27 |
| 8080469 | Method for increasing the area of non-polar and semi-polar nitride substrates | Asako Hirai, Steven P. DenBaars, Shuji Nakamura | 2011-12-20 |
| 8044383 | Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Hong Zhong, Anurag Tyagi, Steven P. DenBaars, Shuji Nakamura | 2011-10-25 |
| 8044417 | Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation | Hisashi Masui, Hisashi Yamada, Kenji Iso, Shuji Nakamura, Steven P. DenBaars | 2011-10-25 |
| 7982208 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, Shuji Nakamura +1 more | 2011-07-19 |
| 7976630 | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture | Christiane Poblenz, Derrick S. Kamber | 2011-07-12 |
| 7955983 | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) | Bilge M. Imer, Steven P. DenBaars | 2011-06-07 |
| 7956371 | High efficiency light emitting diode (LED) | Steven P. DenBaars, Shuji Nakamura | 2011-06-07 |
| 7956360 | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Melvin McLaurin, Steven P. DenBaars, Shuji Nakamura | 2011-06-07 |
| 7948011 | N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor | Siddharth Rajan, Chang Soo Suh, Umesh Mishra | 2011-05-24 |
| 7880183 | Light emitting device having a plurality of light emitting cells and method of fabricating the same | Chung Hoon Lee, Hong San Kim | 2011-02-01 |