Issued Patents All Time
Showing 51–75 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8716946 | Light emitting device for AC power operation | Chung Hoon Lee, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee | 2014-05-06 |
| 8691671 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso +2 more | 2014-04-08 |
| 8686466 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2014-04-01 |
| 8653503 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, Steven P. DenBaars, Shuji Nakamura | 2014-02-18 |
| 8647967 | Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same | Makoto Saito, Shin-Ichiro Kawabata, Derrick S. Kamber, Steven P. DenBaars, Shuji Nakamura | 2014-02-11 |
| 8643024 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N | Arpan Chakraborty, Kwang Choong Kim, Steven P. DenBaars, Umesh Mishra | 2014-02-04 |
| 8641823 | Reactor designs for use in ammonothermal growth of group-III nitride crystals | Siddha Pimputkar, Derrick S. Kamber, Shuji Nakamura | 2014-02-04 |
| 8588260 | Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers | Robert M. Farrell, Mathew C. Schmidt, Kwang Choong Kim, Hisashi Masui, Daniel F. Feezell +2 more | 2013-11-19 |
| 8574525 | Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals | Siddha Pimputkar, Derrick S. Kamber, Shuji Nakamura | 2013-11-05 |
| 8569085 | Photoelectrochemical etching for chip shaping of light emitting diodes | Adele Tamboli, Evelyn L. Hu | 2013-10-29 |
| 8541869 | Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates | Shuji Nakamura, Steven P. DenBaars, Anurag Tyagi | 2013-09-24 |
| 8525230 | Field-effect transistor with compositionally graded nitride layer on a silicaon substrate | Hugues Marchand, Brendan Jude Moran, Umesh Mishra | 2013-09-03 |
| 8524012 | Technique for the growth of planar semi-polar gallium nitride | Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, Shuji Nakamua | 2013-09-03 |
| 8502246 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, Steven P. DenBaars, Shuji Nakamura +1 more | 2013-08-06 |
| 8492185 | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices | Mark P. D'Evelyn, William D. HOUCK, Mathew C. Schmidt, Arpan Chakraborty | 2013-07-23 |
| 8481991 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, Steven P. DenBaars +2 more | 2013-07-09 |
| 8470697 | Method of forming p-type compound semiconductor layer | Ki Bum Nam, Hwa Mok Kim | 2013-06-25 |
| 8465588 | Ammonothermal method for growth of bulk gallium nitride | Christiane Poblenz, Derrick S. Kamber | 2013-06-18 |
| 8450192 | Growth of planar, non-polar, group-III nitride films | Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars +1 more | 2013-05-28 |
| 8395332 | Light emitting device for AC power operation | Chung Hoon Lee, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee | 2013-03-12 |
| 8390011 | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate | Claude C. A. Weisbuch, Aurelien J. F. David, Steven P. DenBaars | 2013-03-05 |
| 8368179 | Miscut semipolar optoelectronic device | John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato +3 more | 2013-02-05 |
| 8357925 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys | Roy B. Chung, Zhen Chen, Steven P. DenBaars, Shuji Nakamura | 2013-01-22 |
| 8299452 | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes | Hitoshi Sato, Hirohiko Hirasawa, Roy B. Chung, Steven P. DenBaars, Shuji Nakamura | 2012-10-30 |
| 8278128 | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut | Hisashi Masui, Hisashi Yamada, Kenji Iso, Asako Hirai, Makoto Saito +2 more | 2012-10-02 |