Issued Patents All Time
Showing 101–125 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7858996 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Hong Zhong, John F. Kaeding, Rajat Sharma, Steven P. DenBaars, Shuji Nakamura | 2010-12-28 |
| 7847293 | Growth of reduced dislocation density non-polar gallium nitride | Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, Steven P. DenBaars, Shuji Nakamura | 2010-12-07 |
| 7846757 | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2010-12-07 |
| 7842527 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices | Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura | 2010-11-30 |
| 7839903 | Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers | Robert M. Farrell, Mathew C. Schmidt, Kwang Choong Kim, Hisashi Masui, Daniel F. Feezell +2 more | 2010-11-23 |
| 7795146 | Etching technique for the fabrication of thin (Al, In, Ga)N layers | Benjamin A. Haskell, P. Morgan Pattison, Troy J. Baker | 2010-09-14 |
| 7781789 | Transparent mirrorless light emitting diode | Steven P. DenBaars, Shuji Nakamura | 2010-08-24 |
| 7772602 | Light emitting device having a plurality of light emitting cells and method of fabricating the same | Chung Hoon Lee, Hong San Kim | 2010-08-10 |
| 7772601 | Light emitting device having a plurality of light emitting cells and method of fabricating the same | Chung Hoon Lee, Hong San Kim | 2010-08-10 |
| 7755096 | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate | Claude C. A. Weisbuch, David J. F. Aurelien, Steven P. DenBaars | 2010-07-13 |
| 7723216 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N | Arpan Chakraborty, Kwang Choong Kim, Steven P. DenBaars, Umesh Mishra | 2010-05-25 |
| 7723745 | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate | Claude C. A. Weisbuch, Aurelien J. F. David, Steven P. DenBaars | 2010-05-25 |
| 7704331 | Technique for the growth of planar semi-polar gallium nitride | Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, Shuji Nakamura | 2010-04-27 |
| 7691658 | Method for improved growth of semipolar (Al,In,Ga,B)N | John F. Kaeding, Dong-Seon Lee, Michael Iza, Troy J. Baker, Hitoshi Sato +3 more | 2010-04-06 |
| 7682953 | Method of forming p-type compound semiconductor layer | Ki Bum Nam, Hwa Mok Kim | 2010-03-23 |
| 7504274 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, Steven P. DenBaars, Shuji Nakamura +1 more | 2009-03-17 |
| 7427555 | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars +1 more | 2008-09-23 |
| 7361576 | Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) | Bilge M. Imer, Steven P. DenBaars | 2008-04-22 |
| 7345298 | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate | Claude C. A. Weisbuch, Aurelien J. F. David, Steven P. DenBaars | 2008-03-18 |
| 7338828 | Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) | Bilge M. Imer, Steven P. DenBaars, Shuji Nakamura | 2008-03-04 |
| 7291864 | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate | Claude C. A. Weisbuch, Aurelien J. F. David, Steven P. DenBaars | 2007-11-06 |
| 7220324 | Technique for the growth of planar semi-polar gallium nitride | Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, Shuji Nakamura | 2007-05-22 |
| 7220658 | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Michael D. Craven, Paul T. Fini, Steven P. DenBaars, Shuji Nakamura | 2007-05-22 |
| 7208393 | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy | Benjamin A. Haskell, Melvin McLaurin, Steven P. DenBaars, Shuji Nakamura | 2007-04-24 |
| 7186302 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, Steven P. DenBaars, Shuji Nakamura +1 more | 2007-03-06 |