Issued Patents All Time
Showing 26–50 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9231376 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Robert M. Farrell, Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison +4 more | 2016-01-05 |
| 9175418 | Method for synthesis of high quality large area bulk gallium based crystals | Mark P. D'Evelyn | 2015-11-03 |
| 9159553 | Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, Steven P. DenBaars +2 more | 2015-10-13 |
| 9133564 | Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other | Siddha Pimputkar, Shuji Nakamura, Shin-Ichiro Kawabata | 2015-09-15 |
| 9136673 | Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser | Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura | 2015-09-15 |
| 9129977 | Method of controlling stress in group-III nitride films deposited on substrates | Hugues Marchand, Brendan Jude Moran, Umesh Mishra | 2015-09-08 |
| 9130119 | Non-polar and semi-polar light emitting devices | Steven P. DenBaars, Mathew C. Schmidt, Kwang Choong Kim, Shuji Nakamura | 2015-09-08 |
| 9040327 | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes | Daniel F. Feezell, Mathew C. Schmidt, Kwang Choong Kim, Robert M. Farrell, Daniel A. Cohen +2 more | 2015-05-26 |
| 9040326 | High light extraction efficiency nitride based light emitting diode by surface roughening | Hong Zhong, Anurag Tyagi, Kenneth Vampola, Steven P. DenBaars, Shuji Nakamura | 2015-05-26 |
| 9039834 | Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition | Michael D. Craven | 2015-05-26 |
| 9030110 | Light emitting device for AC power operation | Chung Hoon Lee, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee | 2015-05-12 |
| 8956896 | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices | Mathew C. Schmidt, Kwang Choong Kim, Hitoshi Sato, Steven P. DenBaars, Shuji Nakamura | 2015-02-17 |
| 8882935 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition | Arpan Chakraborty, Benjamin A. Haskell, Stacia Keller, Steven P. DenBaars, Shuji Nakamura +1 more | 2014-11-11 |
| 8866417 | Light emitting device for AC power operation | Chung Hoon Lee, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee | 2014-10-21 |
| 8866126 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, Steven P. DenBaars +2 more | 2014-10-21 |
| 8860331 | Light emitting device for AC power operation | Chung Hoon Lee, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee | 2014-10-14 |
| 8853669 | Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning | Anurag Tyagi, Steven P. DenBaars, Shuji Nakamura | 2014-10-07 |
| 8835200 | High light extraction efficiency nitride based light emitting diode by surface roughening | Hong Zhong, Anurag Tyagi, Kenneth Vampola, Steven P. DenBaars, Shuji Nakamura | 2014-09-16 |
| 8809867 | Dislocation reduction in non-polar III-nitride thin films | Michael D. Craven, Steven P. DenBaars, Shuji Nakamura | 2014-08-19 |
| 8795440 | Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) | Bilge M. Imer, Steven P. DenBaars, Shuji Nakamura | 2014-08-05 |
| 8795430 | Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates | Robert M. Farrell, Michael Iza, Steven P. DenBaars, Shuji Nakamura | 2014-08-05 |
| 8791000 | Planar nonpolar group-III nitride films grown on miscut substrates | Asako Hirai, Zhongyuan Jia, Makoto Saito, Hisashi Yamada, Kenji Iso +2 more | 2014-07-29 |
| 8772758 | Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N | Matthew T. Hardy, Po Shan Hsu, Steven P. DenBaars, Shuji Nakamura | 2014-07-08 |
| 8761218 | Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes | You-Da Lin, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars | 2014-06-24 |
| 8729671 | Method for increasing the area of non-polar and semi-polar nitride substrates | Asako Hirai, Steven P. DenBaars, Shuji Nakamura | 2014-05-20 |